公开(公告)号：US5200638A

公开(公告)日：1993-04-06

申请号：US547243

申请日：1990-07-03

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/336 ,  H01L21/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/732 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.31 epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

公开(公告)号：US5279977A

公开(公告)日：1994-01-18

申请号：US997924

申请日：1992-12-29

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/336 ,  H01L21/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/732 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861 ,  H01L21/265

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

摘要翻译： 在p-衬底上，n型外延层由p阱包围和隔离。 在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。 绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。 导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸 从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

公开(公告)号：US5258641A

公开(公告)日：1993-11-02

申请号：US944074

申请日：1992-09-11

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861 ,  H01L29/68

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

摘要翻译： 在p-衬底上，n型外延层由p阱包围和隔离。 在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。 绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。 导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸 从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

公开(公告)号：US5389801A

公开(公告)日：1995-02-14

申请号：US972290

申请日：1992-11-05

申请人： Tomohide Terashima ,  Gourab Majumdar

发明人： Tomohide Terashima ,  Gourab Majumdar

IPC分类号： H01L29/78 ,  H01L21/332 ,  H01L21/336 ,  H01L29/06 ,  H01L29/74 ,  H01L29/749 ,  H01L23/58 ,  H01L27/01 ,  H01L31/111

CPC分类号： H01L29/66378 ,  H01L29/0649 ,  H01L29/7455 ,  H01L29/749

摘要： A general object of the present invention is to make a maximum controllable current large without exerting adverse effect on other characteristics. In a surface of an n.sup.- layer 2 formed on a p.sup.+ substrate 1, p diffusion regions 3a, 3b and 3c are formed separated by n.sup.+ diffusion regions 4a, 4b and an oxidation film 9. Above the p diffusion regions 3b and 3c, gate electrodes 5a and 5b are formed insulated from the surrounding by an oxidation film 6. An Al-Si electrode 7 is in contact with the p diffusion region 3a and the n.sup.+ diffusion region 4a while a metal electrode 8 is in contact with the p.sup.+ substrate 1. By virtue of interposition of the oxidation film 9, a thyristor consisting of the n.sup.+ diffusion region 4a, p diffusion region 3a, n.sup.- layer 2 and p.sup.+ substrate 1 is prevented from being actuated.

摘要翻译： 本发明的一般目的是使最大可控电流大，而不会对其它特性产生不利影响。 在p +衬底1上形成的n层2的表面中，由n +扩散区域4a，4b和氧化膜9隔开形成p扩散区域3a，3b和3c。在p扩散区域3b和3c上方， 电极5a和5b通过氧化膜6与周围形成绝缘.Al-Si电极7与p扩散区域3a和n +扩散区域4a接触，而金属电极8与p +衬底1接触 通过插入氧化膜9，防止由n +扩散区域4a，p扩散区域3a，n-层2和p +衬底1组成的晶闸管被致动。

公开(公告)号：US5460981A

公开(公告)日：1995-10-24

申请号：US319520

申请日：1994-10-07

申请人： Tomohide Terashima ,  Gourab Majumdar

发明人： Tomohide Terashima ,  Gourab Majumdar

IPC分类号： H01L29/78 ,  H01L21/332 ,  H01L21/336 ,  H01L29/06 ,  H01L29/74 ,  H01L29/749

CPC分类号： H01L29/66378 ,  H01L29/0649 ,  H01L29/7455 ,  H01L29/749

摘要： A general object of the present invention is to make a maximum controllable current large without exerting adverse effect on other characteristics. In a surface of an n.sup.- layer 2 formed on a p.sup.+ substrate 1, p diffusion regions 3a, 3b and 3c are formed separated by n.sup.+ diffusion regions 4a, 4b and an oxidation film 9. Above the p diffusion regions 3a and 3b, gate electrodes 5a and 5b are formed insulated from the surrounding by an oxidation film 6. An Al--Si electrode 7 is in contact with the p diffusion region 3a and the n.sup.+ diffusion region 4a while a metal electrode 8 is in contact with the p.sup.+ substrate 1. By virtue of interposition of the oxidation film 9, a thyristor consisting of the n.sup.+ diffusion region 4a , p diffusion region 3a, n.sup.- layer 2 and p.sup.+ substrate 1 is prevented from being actuated.

摘要翻译： 本发明的一般目的是使最大可控电流大，而不会对其它特性产生不利影响。 在p +衬底1上形成的n层2的表面中，由n +扩散区域4a，4b和氧化膜9隔开形成p扩散区域3a，3b和3c。在p扩散区域3a和3b上方， 电极5a和5b通过氧化膜6与周围形成绝缘.Al-Si电极7与p扩散区域3a和n +扩散区域4a接触，而金属电极8与p +衬底1接触 通过插入氧化膜9，防止由n +扩散区域4a，p扩散区域3a，n-层2和p +衬底1组成的晶闸管被致动。

公开(公告)号：US4903106A

公开(公告)日：1990-02-20

申请号：US202469

申请日：1988-06-06

申请人： Masanori Fukunaga ,  Gourab Majumdar

发明人： Masanori Fukunaga ,  Gourab Majumdar

IPC分类号： H01L27/02 ,  H01L27/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H02H5/04 ,  H03K17/14

CPC分类号： H01L29/7803 ,  H01L27/0211 ,  H01L29/1008 ,  H01L29/1033 ,  H01L29/1079 ,  H02H5/044 ,  H03K17/145 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095

摘要： The present invention relates to a semiconductor device employed for high power use and a method of manufacturing the same. According to the present invention, a temperature detecting device is formed on the same substrate with a power device. Thus, there is no need to add an external temperature sensor, whereby the device can be reduced in size. Further, an abnormal temperature of the power device is accurately detected by the temperature detecting device, whereby thermal breakdown of the power device is reliably prevented.

摘要翻译： 本发明涉及用于大功率使用的半导体器件及其制造方法。 根据本发明，在具有动力装置的同一基板上形成温度检测装置。 因此，不需要添加外部温度传感器，由此可以减小装置的尺寸。 此外，通过温度检测装置精确地检测功率器件的异常温度，从而可靠地防止功率器件的热击穿。

公开(公告)号：US06724169B2

公开(公告)日：2004-04-20

申请号：US10260406

申请日：2002-10-01

申请人： Gourab Majumdar ,  Shinji Hatae ,  Tatsuo Oota ,  Masanori Fukunaga

发明人： Gourab Majumdar ,  Shinji Hatae ,  Tatsuo Oota ,  Masanori Fukunaga

IPC分类号： H02P528

CPC分类号： H02M7/538 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H03K17/063 ,  H03K17/567 ,  H03K17/6871 ,  H01L2924/00014 ,  H01L2924/00

摘要： A controller for controlling a power device in response to an input signal includes a first signal generator for generating a first signal in response to the input signal; a level shifter for changing an output level of the first signal to a value which is a function of a first main power supply potential in order to produce a second signal; and a first control signal generator for generating the control signal for a first semiconductor device in response to the second signal. The level shifter includes at least one level shifting semiconductor element wherein the semiconductor element is controlled by the first signal and the at least one level shifting semiconductor element exhibiting breakdown voltage characteristics whereby a breakdown voltage has a value not less than a voltage in the range between a value of the first and a value of a second main power supply potential.

摘要翻译： 用于响应于输入信号控制功率器件的控制器包括：第一信号发生器，用于响应于输入信号产生第一信号; 电平移位器，用于将第一信号的输出电平改变为作为第一主电源电位的函数的值，以产生第二信号; 以及第一控制信号发生器，用于响应于第二信号产生用于第一半导体器件的控制信号。 电平移位器包括至少一个电平移位半导体元件，其中半导体元件由第一信号和至少一个电平移位半导体元件控制，具有击穿电压特性，由此击穿电压具有不小于 第一主电源电位的值和第二主电源电位的值。

公开(公告)号：US06522098B1

公开(公告)日：2003-02-18

申请号：US08775308

申请日：1996-12-31

申请人： Gourab Majumdar ,  Shinji Hatae ,  Tatsuo Oota ,  Masanori Fukunaga

发明人： Gourab Majumdar ,  Shinji Hatae ,  Tatsuo Oota ,  Masanori Fukunaga

IPC分类号： H02P100

CPC分类号： H02M7/538 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H03K17/063 ,  H03K17/567 ,  H03K17/6871 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device comprising at least one power device, at least one control element for controlling the power device(s), a plurality of first terminals connected to the power device(s), a plurality of second terminals connected to the control element(s), a support member having a heat sink disposed on a lower surface of the support member and the power device(s), control element(s), and first and second terminals arranged on the upper surface of the support member, and a package including the support member for sealing the devices and one end of the terminals such that first and second terminals protrude from different sides of the package. The arrangement allows a reduced size three-phase motor drive controller, a reduction in noise interference to the control element, and reduction in terminal pitch size.

摘要翻译： 一种半导体器件，包括至少一个功率器件，用于控制功率器件的至少一个控制元件，连接到所述功率器件的多个第一端子，连接到所述功率器件的多个第二端子 ），具有设置在所述支撑构件的下表面上的散热器的支撑构件和所述动力装置，控制元件以及布置在所述支撑构件的上表面上的第一和第二端子，以及包装 包括用于密封装置的支撑构件和端子的一端，使得第一和第二端子从包装的不同侧突出。 该装置允许减小尺寸的三相电动机驱动控制器，降低对控制元件的噪声干扰以及减小端子间距尺寸。

公开(公告)号：US6005366A

公开(公告)日：1999-12-21

申请号：US373435

申请日：1995-01-17

申请人： Gourab Majumdar ,  Shinji Hatae ,  Tatsuo Oota ,  Masanori Fukunaga

发明人： Gourab Majumdar ,  Shinji Hatae ,  Tatsuo Oota ,  Masanori Fukunaga

IPC分类号： H02M7/48 ,  H02M7/538 ,  H02M7/5387 ,  H02P27/06 ,  H03K17/06 ,  H03K17/567 ,  H03K17/687 ,  H02P5/28

CPC分类号： H02M7/538 ,  H03K17/063 ,  H03K17/567 ,  H03K17/6871 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111

摘要： A controller for power devices which is not required to individually insulate high and low potential portions and to include an insulated power supply is disclosed. An external controller (6) is connected to a second internal control circuit (4) which is in turn connected to a level shift circuit (5) and a gate electrode of a transistor (Q2). Power supply voltage (V1) is applied to the second internal control circuit (4) for operation thereof. The level shift circuit (5) is connected to a first internal control circuit (3) which is in turn connected to a gate electrode of a transistor (Q1) and a charge pump circuit (7). Control of a first semiconductor circuit is made through the level shift means in response to an input signal generated on the basis of a second main power supply potential, thereby achieving increased responsiveness of the power devices to a control signal and improved integration.

公开(公告)号：US4971921A

公开(公告)日：1990-11-20

申请号：US440213

申请日：1989-11-22

申请人： Masanori Fukunaga ,  Gourab Majumdar

发明人： Masanori Fukunaga ,  Gourab Majumdar

IPC分类号： H01L27/02 ,  H01L27/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H02H5/04 ,  H03K17/14

CPC分类号： H01L29/7803 ,  H01L27/0211 ,  H01L29/1008 ,  H01L29/1033 ,  H01L29/1079 ,  H02H5/044 ,  H03K17/145 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095

摘要： The present invention relates to a semiconductor device employed for high power use and a method of manufacturing the same. According to the present invention, a temperature detecting device is formed on the same substrate with a power device. Thus, there is no need to add an external temperature sensor, whereby the device can be reduced in size. Further, an abnormal temperature of the power device is accurately detected by the temperature detecting device, whereby thermal breakdown of the power device is reliably prevented.

摘要翻译： 本发明涉及一种用于大功率使用的半导体器件及其制造方法。 根据本发明，在具有动力装置的同一基板上形成温度检测装置。 因此，不需要添加外部温度传感器，由此可以减小装置的尺寸。 此外，通过温度检测装置精确地检测功率器件的异常温度，从而可靠地防止功率器件的热击穿。