发明授权
- 专利标题： Semiconductor device and method of fabrication thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US945260申请日： 1992-09-15
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公开(公告)号： US5279985A公开(公告)日： 1994-01-18
- 发明人: Satoshi Kamiyama
- 申请人： Satoshi Kamiyama
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-238535 19910919
- 主分类号： H01B3/12
- IPC分类号： H01B3/12 ; H01L21/02 ; H01L21/28 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/108 ; H01L29/43 ; H01L21/70
摘要：
The present invention relates to a semiconductor device and a method of fabrication of the same, said semiconductor device including a capacitive structure comprising of a lower layer electrode consisting of a silicon material, a capacitive insulating film consisting of a tantalum oxide film and an upper layer electrode, said upper layer electrode comprising at least a titanium nitride film for covering said capacitive insulating film. Said method of fabrication comprises the steps of: forming the lower layer electrode; forming the capacitive insulating film for covering said lower layer electrode; and forming the titanium nitride film for covering said capacitive insulating film.
公开/授权文献
- US5992067A On-site interchangeable neon sign 公开/授权日：1999-11-30
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