发明授权
- 专利标题： Method of producing a wafer having a curved notch
- 专利标题（中）： 制造具有弯曲凹口的晶片的方法
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申请号： US857648申请日： 1992-03-25
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公开(公告)号： US5279992A公开(公告)日： 1994-01-18
- 发明人: Hisashi Maejima , Hiroshi Nishizuka , Susumu Komoriya , Etuo Egashira
- 申请人： Hisashi Maejima , Hiroshi Nishizuka , Susumu Komoriya , Etuo Egashira
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX131949 19820730
- 主分类号： B24D5/02
- IPC分类号： B24D5/02 ; C30B33/00 ; H01L21/304 ; H01L23/544 ; H01L29/06 ; H01L21/312
摘要：
A wafer having chamfered bent portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer such as an orientation flatness. The chipping of the wafer can be prevented, and in coating the wafer with a photoresist, forming an epitaxially grown layer on the wafer, etc., films having desired characteristics can be provided on the surface of the wafer.
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