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    PATTERN TRANSFER METHOD AND IMPRINT DEVICE
    2.
    发明申请
    PATTERN TRANSFER METHOD AND IMPRINT DEVICE 失效
    图案转印方法和印刷装置

    公开(公告)号：US20120195993A1

    公开(公告)日：2012-08-02

    申请号：US13366792

    申请日：2012-02-06

    申请人： Takashi ANDO ,  Susumu KOMORIYA ,  Masahiko OGINO ,  Akihiro MIYAUCHI

    发明人： Takashi ANDO ,  Susumu KOMORIYA ,  Masahiko OGINO ,  Akihiro MIYAUCHI

    IPC分类号： B29C59/16

    CPC分类号： G11B7/263 ,  B29C33/303 ,  B29C43/003 ,  B29C43/021 ,  B29C43/58 ,  B29C2043/025 ,  B29C2043/043 ,  B29C2043/3602 ,  B29C2043/3634 ,  B29C2043/5833 ,  B29L2011/0075 ,  B29L2017/005 ,  B29L2031/756

    摘要： In order to allow for aligning a relative position between a transferred object and a stamper with high accuracy without providing an alignment pattern in the transferred object, there are provided: a pattern transfer method, including: when adjusting the relative position between the stamper and the transferred object, a step of detecting at least two or more edge positions of the transferred object and calculating an arbitrary point from the detected edge positions; a step of detecting a position of the stamper from an edge of the stamper or an alignment mark formed in the stamper; and a step of adjusting the relative position between the transferred object and the stamper from the arbitrary point and the position of the stamper; and an imprint device using the same.

    摘要翻译： 为了允许高精度地对准被转印物体与压模之间的相对位置，而不在被转移物体中提供对准图案，提供了一种图案转印方法，包括：当调节压模和 检测被转移对象的至少两个以上边缘位置的步骤，并从检测到的边缘位置计算任意点; 从压模的边缘或形成在压模中的对准标记检测压模的位置的步骤; 以及从任意点和压模的位置调整被转印物体与压模之间的相对位置的步骤; 以及使用其的压印装置。

    Pattern transfer method and imprint device
    3.
    发明授权
    Pattern transfer method and imprint device 失效
    图案转印方法和印版装置

    公开(公告)号：US08133418B2

    公开(公告)日：2012-03-13

    申请号：US11833284

    申请日：2007-08-03

    申请人： Takashi Ando ,  Susumu Komoriya ,  Masahiko Ogino ,  Akihiro Miyauchi

    发明人： Takashi Ando ,  Susumu Komoriya ,  Masahiko Ogino ,  Akihiro Miyauchi

    IPC分类号： B29C45/76

    CPC分类号： G11B7/263 ,  B29C33/303 ,  B29C43/003 ,  B29C43/021 ,  B29C43/58 ,  B29C2043/025 ,  B29C2043/043 ,  B29C2043/3602 ,  B29C2043/3634 ,  B29C2043/5833 ,  B29L2011/0075 ,  B29L2017/005 ,  B29L2031/756

    摘要： In order to allow for aligning a relative position between a transferred object and a stamper with high accuracy without providing an alignment pattern in the transferred object, there are provided: a pattern transfer method, including: when adjusting the relative position between the stamper and the transferred object, a step of detecting at least two or more edge positions of the transferred object and calculating an arbitrary point from the detected edge positions; a step of detecting a position of the stamper from an edge of the stamper or an alignment mark formed in the stamper; and a step of adjusting the relative position between the transferred object and the stamper from the arbitrary point and the position of the stamper; and an imprint device using the same.

    摘要翻译： 为了允许高精度地对准被转印物体与压模之间的相对位置，而不在被转移物体中提供对准图案，提供了一种图案转印方法，包括：当调节压模和 检测被转移对象的至少两个以上边缘位置的步骤，并从检测到的边缘位置计算任意点; 从压模的边缘或形成在压模中的对准标记检测压模的位置的步骤; 以及从任意点和压模的位置调整被转印物体与压模之间的相对位置的步骤; 以及使用其的压印装置。

    Method of making semiconductor integrated circuit, pattern detecting method, and system for semiconductor alignment and reduced stepping exposure for use in same
    4.
    发明授权
    Method of making semiconductor integrated circuit, pattern detecting method, and system for semiconductor alignment and reduced stepping exposure for use in same 失效
    制造半导体集成电路的方法，图案检测方法和用于半导体对准的系统和减少的步进曝光在其中使用

    公开(公告)号：US5094539A

    公开(公告)日：1992-03-10

    申请号：US313180

    申请日：1989-02-21

    申请人： Susumu Komoriya ,  Takao Kawanabe ,  Shinya Nakagawa ,  Takayoshi Oosakaya ,  Nobuyuki Iriki

    发明人： Susumu Komoriya ,  Takao Kawanabe ,  Shinya Nakagawa ,  Takayoshi Oosakaya ,  Nobuyuki Iriki

    IPC分类号： G03F9/00

    CPC分类号： G03F9/70

    摘要： According to the present invention, in making alignment between a semiconductor integrated circuit wafer and a mask or a reticle in light exposure of the wafer with a monochromatic light such as g-, i- or h- line of a mercury lamp, using a reduced stepping exposure system, light from a predetermined pattern on the wafer is taken out to an off-axis position and observed according to a through-the-lens method; in this case as a characteristic feature of the invention, the observation light is taken out from below the reticle and is passed through chromatic aberration correcting lenses, thereby permitting the use of a polychromatic or continuous spectrum light.

    摘要翻译： 根据本发明，在使用诸如水银灯的g-，i-或h-线的单色光在晶片的曝光中在半导体集成电路晶片和掩模或掩模版之间进行对准时，使用还原 步进曝光系统，从晶片上的预定图案的光被取出到离轴位置，并根据透镜方法观察; 在这种情况下，作为本发明的特征，观察光从掩模版的下方取出并通过色像差校正透镜，从而允许使用多色或连续的光谱光。

    Exposure method and exposure apparatus
    5.
    发明授权
    Exposure method and exposure apparatus 失效
    曝光方法和曝光装置

    公开(公告)号：US4699505A

    公开(公告)日：1987-10-13

    申请号：US742786

    申请日：1985-06-10

    申请人： Susumu Komoriya ,  Hiroshi Nishizuka ,  Shinya Nakagawa ,  Hisashi Maejima

    发明人： Susumu Komoriya ,  Hiroshi Nishizuka ,  Shinya Nakagawa ,  Hisashi Maejima

    IPC分类号： H01L21/30 ,  G03F7/20 ,  G03F7/207 ,  H01L21/027 ,  G03B27/42

    CPC分类号： G03F7/70933 ,  G03F7/70241 ,  G03F7/70258 ,  G03F7/70883

    摘要： The invention deals with an exposure apparatus which detects environmental conditions such as atmospheric pressure, temperature and humidity in which the exposure apparatus is placed, and which maintains the projected magnification constant at all times based upon the detected values, so that the pattern can be reproduced precisely. Concretely, the apparatus comprises a detector to detect at least one of the tube temperature of the optical projecting system, humidity or atmospheric pressure near the optical system, and a control unit which controls optical characteristics based upon the signals detected by the detector. Namely, the control unit adjusts the optical characteristics depending upon the environmental conditions thereby to adjust variation in the projecting magnification and/or variation in the focal position. Thus, variation in the optical characteristics is adjusted to transfer the pattern maintaining high precision.

    摘要翻译： 本发明涉及一种检测放置曝光装置的大气压，温度和湿度等环境条件的曝光装置，并且基于检测值一直保持投影倍率恒定，从而可以再现图案 恰恰。 具体地，该装置包括检测光学投影系统的管温度，光学系统附近的湿度或大气压的至少一个的检测器，以及基于由检测器检测到的信号来控制光学特性的控制单元。 也就是说，控制单元根据环境条件调节光学特性，从而调整投影倍率的变化和/或焦点位置的变化。 因此，调整光学特性的变化以转印图案保持高精度。

    Imprint device and microstructure transfer method
    7.
    发明授权
    Imprint device and microstructure transfer method 有权
    压印装置和微结构转印方法

    公开(公告)号：US08109751B2

    公开(公告)日：2012-02-07

    申请号：US11774244

    申请日：2007-07-06

    申请人： Takashi Ando ,  Susumu Komoriya ,  Masahiko Ogino ,  Akihiro Miyauchi

    发明人： Takashi Ando ,  Susumu Komoriya ,  Masahiko Ogino ,  Akihiro Miyauchi

    IPC分类号： B28B11/08

    CPC分类号： B29C43/021 ,  B29C43/003 ,  B29C43/58 ,  B29C2043/025 ,  B29C2043/3634 ,  B29C2043/5808 ,  B29L2011/0016 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： There is provided an imprint device for transferring a fine pattern to a material to form a patterned material. The device comprises a stamper having the fine pattern thereon, and a pressure distribution mechanism. The stamper is pressed against the material, and the pressure distribution mechanism provides a nonuniform pressure distribution in a patterned region of the patterned material, while the stamper is in contact with the material. There are provided an imprint device and a microstructure transfer method, by which it is possible to sufficiently spread a resin or other material for forming a pattern layer between a stamper and a patterned material with a lower pressure so as not to damage the stamper or the patterned material, and to form a pattern formation layer having the uniform thickness on the patterned material.

    摘要翻译： 提供了用于将精细图案转印到材料以形成图案化材料的压印装置。 该装置包括其上具有精细图案的压模和压力分布机构。 压模被压在材料上，并且压力分配机构在图案化材料的图案化区域中提供不均匀的压力分布，同时压模与材料接触。 提供了压印装置和微结构转印方法，通过该方法可以在压模和图案化材料之间以较低压力充分地铺展树脂或其它材料以形成图案层，以便不损坏压模或 并且在图案化材料上形成具有均匀厚度的图案形成层。

    PATTERN TRANSFER METHOD AND IMPRINT DEVICE
    8.
    发明申请
    PATTERN TRANSFER METHOD AND IMPRINT DEVICE 失效
    图案转印方法和印刷装置

    公开(公告)号：US20080028953A1

    公开(公告)日：2008-02-07

    申请号：US11833284

    申请日：2007-08-03

    申请人： Takashi Ando ,  Susumu Komoriya ,  Masahiko Ogino ,  Akihiro Miyauchi

    发明人： Takashi Ando ,  Susumu Komoriya ,  Masahiko Ogino ,  Akihiro Miyauchi

    IPC分类号： B31F1/07 ,  G01B11/00

    CPC分类号： G11B7/263 ,  B29C33/303 ,  B29C43/003 ,  B29C43/021 ,  B29C43/58 ,  B29C2043/025 ,  B29C2043/043 ,  B29C2043/3602 ,  B29C2043/3634 ,  B29C2043/5833 ,  B29L2011/0075 ,  B29L2017/005 ,  B29L2031/756

    摘要： In order to allow for aligning a relative position between a transferred object and a stamper with high accuracy without providing an alignment pattern in the transferred object, there are provided: a pattern transfer method, including: when adjusting the relative position between the stamper and the transferred object, a step of detecting at least two or more edge positions of the transferred object and calculating an arbitrary point from the detected edge positions; a step of detecting a position of the stamper from an edge of the stamper or an alignment mark formed in the stamper; and a step of adjusting the relative position between the transferred object and the stamper from the arbitrary point and the position of the stamper; and an imprint device using the same.

    摘要翻译： 为了允许高精度地对准被转印物体与压模之间的相对位置，而不在被转移物体中提供对准图案，提供了一种图案转印方法，包括：当调节压模与 检测被转移对象的至少两个以上边缘位置的步骤，并从检测到的边缘位置计算任意点; 从压模的边缘或形成在压模中的对准标记检测压模的位置的步骤; 以及从任意点和压模的位置调整被转印物体与压模之间的相对位置的步骤; 以及使用其的压印装置。

    Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method
    9.
    发明授权
    Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method 失效
    成膜薄膜的控制方法，所述控制方法的系统，所述曝光方法的曝光方法和系统

    公开(公告)号：US5747201A

    公开(公告)日：1998-05-05

    申请号：US392196

    申请日：1995-02-22

    申请人： Yasuhiko Nakayama ,  Masataka Shiba ,  Susumu Komoriya

    发明人： Yasuhiko Nakayama ,  Masataka Shiba ,  Susumu Komoriya

    IPC分类号： G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40

    CPC分类号： G03F7/70608 ,  G03F7/20 ,  G03F7/70566 ,  G03F7/70583

    摘要： A method for irradiating a substrate such as a semiconductor substrate, coated with a photoresist, with light to measure variations in optical properties such as reflectivity, refractive index, transmittance, polarization, spectral transmittance, for determining an optimum photoresist coating condition, an optimum photoresist baking condition, an optimum developing condition or an optimum exposure energy quantity, and forming a photoresist pattern according to the optimum condition. A system for the exposure method, a controlling method of forming a photoresist film by use of the exposure method, and a system for the controlling method, are useful for stabilization of the formation or treatment of the photoresist film, and ensure less variations in the pattern size. Furthermore, even in the case of a thin film other than a photoresist film, the formation or treatment of the thin film can be stabilized by measuring the optical property before and during or after the formation of the thin film and using the measurement results to control the condition for forming the thin film, the etching condition or the coating condition.

    摘要翻译： 用于用光照射涂覆有光致抗蚀剂的半导体衬底的衬底以测量诸如反射率，折射率，透射率，极化，光谱透射率之类的光学性质的变化的方法，用于确定最佳光刻胶涂覆条件，最佳光刻胶 烘烤条件，最佳显影条件或最佳曝光能量，以及根据最佳条件形成光致抗蚀剂图案。 用于曝光方法的系统，通过曝光方法形成光致抗蚀剂膜的控制方法和用于控制方法的系统可用于稳定光致抗蚀剂膜的形成或处理，并且确保较少的变化 图案大小。 此外，即使在除了光致抗蚀剂膜之外的薄膜的情况下，也可以通过测量薄膜形成之前和之中或之后的光学特性来稳定薄膜的形成或处理，并且使用测量结果来控制 形成薄膜的条件，蚀刻条件或涂布条件。

    Method of making semiconductor integrated circuit, pattern detecting method, and system for semiconductor alignment and reduced stepping exposure for use in same
    10.
    发明授权
    Method of making semiconductor integrated circuit, pattern detecting method, and system for semiconductor alignment and reduced stepping exposure for use in same 失效
    制造半导体集成电路的方法，图案检测方法以及用于半导体对准的系统和减少的步进曝光用于其中

    公开(公告)号：US5432608A

    公开(公告)日：1995-07-11

    申请号：US111310

    申请日：1993-08-24

    申请人： Susumu Komoriya ,  Takao Kawanabe ,  Shinya Nakagawa ,  Takayoshi Oosakaya ,  Nobuyuki Iriki

    发明人： Susumu Komoriya ,  Takao Kawanabe ,  Shinya Nakagawa ,  Takayoshi Oosakaya ,  Nobuyuki Iriki

    IPC分类号： G03F9/00 ,  H01L21/30

    CPC分类号： G03F9/70

    摘要： According to the present invention, in making alignment between a semiconductor integrated circuit wafer and a mask or a reticle in light exposure of the wafer with a monochromatic light such as g-, i- or h-line of a mercury lamp, using a reduced stepping exposure system, light from a predetermined pattern on the wafer is taken out to an off-axis position and observed according to Through-the-Lens method; in this case as a characteristic feature of the invention, the observation light taken out from below the reticle is passed through chromatic aberration correcting lenses, thereby permitting the use of a polychromatic or continuous spectrum light.

    摘要翻译： 根据本发明，在采用诸如水银灯的g-，i-或h-线的单色光的晶片的曝光中，在半导体集成电路晶片和掩模或掩模版之间进行对准时，使用还原 步进曝光系统，从晶片上的预定图案的光线取出到离轴位置，并根据透镜法进行观察; 在这种情况下，作为本发明的特征，从掩模版下方取出的观察光通过色像差校正透镜，从而允许使用多色或连续光谱光。