发明授权
- 专利标题： Method of manufacturing a CCD solid state image sensing device
- 专利标题（中）： 制造CCD固体摄像装置的方法
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申请号： US949130申请日： 1992-09-23
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公开(公告)号： US5288656A公开(公告)日： 1994-02-22
- 发明人: Takahisa Kusaka , Hideo Kanbe , Akio Izumi , Hideshi Abe , Masanori Ohashi , Atsushi Asai
- 申请人： Takahisa Kusaka , Hideo Kanbe , Akio Izumi , Hideshi Abe , Masanori Ohashi , Atsushi Asai
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-051464 19910315
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L31/0288 ; H01L31/103 ; H01L21/70
摘要：
In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.
公开/授权文献
- US5939702A Writing implement having an integrated optical reader 公开/授权日：1999-08-17