A charge-coupled device comprises transfer gate electrodes separated from a substrate by a multilayer insulating film, and gate electrodes of MIS transistors separated from the substrate by a single layer insulating film. The multilayer insulating film comprising at least a lower silicon oxide layer of 10 nm to 200 nm thickness and an upper silicon nitride layer of 10 nm to 100 nm thickness. Since each of the gate insulating films of the MIS transistors is the same layer as the lower silicon oxide layer, there occurs no degradation in the transistor characteristics due to the surface states or the trapping states present within the silicon nitride layer.