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    Method of making charge-coupled device and solid-state imaging device having an ONO transfer gate insulating film
    1.
    发明授权
    Method of making charge-coupled device and solid-state imaging device having an ONO transfer gate insulating film 失效
    制造电荷耦合器件的方法和具有ONO转移栅绝缘膜的固态成像器件

    公开(公告)号：US5302545A

    公开(公告)日：1994-04-12

    申请号：US73137

    申请日：1993-06-07

    申请人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

    发明人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

    IPC分类号： H01L27/148 ,  H01L21/339

    CPC分类号： H01L27/14831 ,  Y10S438/954

    摘要： A charge-coupled device comprises transfer gate electrodes separated from a substrate by a multilayer insulating film, and gate electrodes of MIS transistors separated from the substrate by a single layer insulating film. The multilayer insulating film comprising at least a lower silicon oxide layer of 10 nm to 200 nm thickness and an upper silicon nitride layer of 10 nm to 100 nm thickness. Since each of the gate insulating films of the MIS transistors is the same layer as the lower silicon oxide layer, there occurs no degradation in the transistor characteristics due to the surface states or the trapping states present within the silicon nitride layer.

    摘要翻译： 电荷耦合器件包括通过多层绝缘膜与衬底分离的传输栅电极，以及通过单层绝缘膜与衬底分离的MIS晶体管的栅电极。 所述多层绝缘膜至少包括10nm至200nm厚度的较低氧化硅层和10nm至100nm厚度的上部氮化硅层。 由于MIS晶体管的每个栅极绝缘膜与下部氧化硅层相同，所以由于存在于氮化硅层内的表面状态或俘获状态，晶体管特性不会降低。

    Charge-coupled device and solid-state imaging device
    2.
    发明授权
    Charge-coupled device and solid-state imaging device 失效
    充电耦合器件和固态成像器件

    公开(公告)号：US5241198A

    公开(公告)日：1993-08-31

    申请号：US797307

    申请日：1991-11-25

    申请人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

    发明人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14831 ,  Y10S438/954

    摘要： A charge-coupled device comprises transfer gate electrodes separated from a substrate by a multi-layer insulating film, and gate electrodes of MIS transistors separated from the substrate by a single layer insulating film. The multilayer insulating film comprising at least a lower silicon oxide layer of 10 nm to 200 nm thickness and an upper silicon nitride layer of 10 nm to 100 nm thickness. Since each of the gate insulating films of the MIS transistors is the same layer as the lower silicon oxide layer, there occurs no degradation in the transistor characteristics due to the surface states or the trapping states present within the silicon nitride layer.

    Solid-state image pickup device and manufacturing method of the same
    3.
    发明授权
    Solid-state image pickup device and manufacturing method of the same 失效
    固态摄像装置及其制造方法

    公开(公告)号：US5432363A

    公开(公告)日：1995-07-11

    申请号：US344416

    申请日：1994-11-23

    申请人： Wataru Kamisaka ,  Hiroyuki Okada ,  Yuji Matsuda

    发明人： Wataru Kamisaka ,  Hiroyuki Okada ,  Yuji Matsuda

    IPC分类号： H01L21/3205 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3722 ,  H01L29/78 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L27/14831

    摘要： Photoelectric converting parts and vertical CCD register parts are formed in a semiconductor substrate. Polysilicon electrodes are formed on the vertical CCD register parts. On the polysilicon electrodes, polysilicon oxide film and dielectric film are deposited. On the polysilicon electrodes, contact windows are formed by mask matching and etching. The contact windows are formed in the first polysilicon electrode and second polysilicon electrode so as to realize four-phase drive of the solid-state image pickup device. Polysilicon film and tungsten silicide film are formed thereon. By etching these films, a first wiring is formed. A second wiring of aluminum film is formed thereon through an interlayer dielectric film. Hence, a high transfer efficiency and a favorable smear noise characteristic are presented at low illumination.

    摘要翻译： 光电转换部件和垂直CCD寄存器部件形成在半导体衬底中。 多晶硅电极形成在垂直CCD寄存器部分上。 在多晶硅电极上沉积多晶硅氧化物膜和电介质膜。 在多晶硅电极上，通过掩模匹配和蚀刻形成接触窗口。 接触窗形成在第一多晶硅电极和第二多晶硅电极中，以实现固态图像拾取装置的四相驱动。 在其上形成多晶硅膜和硅化钨膜。 通过蚀刻这些膜，形成第一布线。 通过层间绝缘膜在其上形成铝膜的第二布线。 因此，在低照度下呈现高转印效率和良好的涂片噪声特性。

    Semiconductor device containing an adjustable voltage generator
    4.
    发明授权
    Semiconductor device containing an adjustable voltage generator 失效
    包含可调电压发生器的半导体器件

    公开(公告)号：US5867055A

    公开(公告)日：1999-02-02

    申请号：US658005

    申请日：1996-06-04

    申请人： Masaji Asaumi ,  Yuji Matsuda

    发明人： Masaji Asaumi ,  Yuji Matsuda

    IPC分类号： H01L21/82 ,  H01L21/822 ,  H01L27/04 ,  H01L27/14 ,  H01L27/148 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/376 ,  H01H37/76

    CPC分类号： H01L27/14887

    摘要： A semiconductor device and a method of inspecting the same are described. The semiconductor device does not need voltage adjustment of an external driver circuit, since it contains a voltage generator to inspect and memorize the best value of voltage by controlling from outside. The voltage generator has a plurality of capacitors whose electrodes of one side are connected to a common node, a potential changing circuit to change the potential to which the other electrodes of these capacitors are connected respectively, and a buffer amplifier whose input power is the voltage generated in the common node. The output power of the buffer amplifier is connected to a semiconductor integrated circuit. The potential changing circuit is provided to change the potential to which the electrode of each capacitor is connected to a source potential or to a ground potential depending on the connection of the fuse connected between the source and each of the capacitors.

    摘要翻译： 对半导体装置及其检查方法进行说明。 半导体器件不需要外部驱动电路的电压调节，因为它包含电压发生器，以通过从外部控制来检测和记忆最佳电压值。 电压发生器具有多个电容器，其一侧的电极连接到公共节点，改变电位以改变这些电容器的其他电极的电位的电位改变电路，以及输入功率为电压的缓冲放大器 在公共节点中生成。 缓冲放大器的输出功率连接到半导体集成电路。 提供电位改变电路以根据连接在源极和每个电容器之间的熔丝的连接来改变每个电容器的电极连接到源极电位或接地电位的电位。

    Power supply device, scanner power supply device, and image forming apparatus
    5.
    发明授权
    Power supply device, scanner power supply device, and image forming apparatus 有权
    电源装置，扫描仪供电装置和图像形成装置

    公开(公告)号：US08120331B2

    公开(公告)日：2012-02-21

    申请号：US12206248

    申请日：2008-09-08

    申请人： Hiroyuki Takahashi ,  Yusuke Ozaki ,  Eiji Nemoto ,  Yuji Matsuda ,  Hiroki Ohkubo

    发明人： Hiroyuki Takahashi ,  Yusuke Ozaki ,  Eiji Nemoto ,  Yuji Matsuda ,  Hiroki Ohkubo

    IPC分类号： H02J7/00

    CPC分类号： H02J7/35 ,  G03G15/80 ,  Y02E10/566

    摘要： A power supply device accumulates charges generated by a photovoltaic unit. The power supply device includes a first capacitor having a first capacitance, in which the charges generated by the photovoltaic unit are charged; a second capacitor having a second capacitance that is larger than the first capacitance; and a switching unit that switches between a first connection of connecting the photovoltaic unit to the first capacitor and a second connection of connecting the first capacitor to the second capacitor.

    摘要翻译： 电源装置累积由光电单元产生的电荷。 电源装置包括具有第一电容的第一电容器，其中由光电单元产生的电荷被充电; 具有大于所述第一电容的第二电容的第二电容器; 以及切换单元，其在将光电单元连接到第一电容器的第一连接和将第一电容器连接到第二电容器的第二连接之间切换。

    Solid-state image pickup device having a signal separation part for separating and providing vertical and horizontal signals and drive method thereof
    6.
    发明授权
    Solid-state image pickup device having a signal separation part for separating and providing vertical and horizontal signals and drive method thereof 有权
    具有用于分离和提供垂直和水平信号的信号分离部分的固态图像拾取装置及其驱动方法

    公开(公告)号：US08054365B2

    公开(公告)日：2011-11-08

    申请号：US12269408

    申请日：2008-11-12

    申请人： Yuji Matsuda

    发明人： Yuji Matsuda

    IPC分类号： H04N3/14 ,  H04N5/335 ,  G06F1/00

    CPC分类号： H04N5/335 ,  H04N5/372

    摘要： A solid-state image pickup device relating to the present invention comprises a pixel area where multiple pixels used for photoelectric conversion of incident light are two-dimensionally arranged. Vertical signal input lines to which vertical transfer signals for transferring signal charges generated at the pixels vertically in the pixel area are applied are connected to the pixel area. Furthermore, horizontal signal input lines to which horizontal transfer signals for horizontally transferring the signal charges are applied are connected to a horizontal transfer part for horizontally transferring the signal charges transferred vertically in the pixel area. A signal separation part separates vertical and horizontal transfer signals from a pulse signal supplied via a complex signal input terminal and supplies the separated signals to the vertical signal input line and the horizontal signal input line, respectively.

    摘要翻译： 本发明的固体摄像装置具有二维排列有入射光的光电转换用的多个像素的像素区域。 垂直信号输入线被连接到像素区域，垂直信号输入线被施加到垂直信号输入线，垂直传输信号用于传送在像素区域中垂直的像素产生的信号电荷。 此外，施加用于水平传送信号电荷的水平传送信号的水平信号输入线连接到水平传送部分，用于水平传送在像素区域中垂直传送的信号电荷。 信号分离部分将经由复信号输入端提供的脉冲信号的垂直和水平传送信号分离，并将分离的信号分别提供给垂直信号输入线和水平信号输入线。

    Apparatus and method for color image forming, and computer program product for driver controller
    8.
    发明授权
    Apparatus and method for color image forming, and computer program product for driver controller 失效
    用于彩色图像形成的装置和方法，以及用于驱动器控制器的计算机程序产品

    公开(公告)号：US07373093B2

    公开(公告)日：2008-05-13

    申请号：US11104618

    申请日：2005-04-13

    申请人： Tadashi Shinohara ,  Masata Yokoyama ,  Kazuhiko Kobayashi ,  Yohei Miura ,  Toshiyuki Yakahashi ,  Yuji Matsuda ,  Jun Hosokawa ,  Nobuto Yokokawa ,  Toshiyuki Andoh

    发明人： Tadashi Shinohara ,  Masata Yokoyama ,  Kazuhiko Kobayashi ,  Yohei Miura ,  Toshiyuki Yakahashi ,  Yuji Matsuda ,  Jun Hosokawa ,  Nobuto Yokokawa ,  Toshiyuki Andoh

    IPC分类号： G03G15/00

    CPC分类号： G03G15/0194 ,  G03G15/0189 ,  G03G2215/0129 ,  G03G2215/0148 ,  G03G2215/0158

    摘要： A color image forming apparatus including a plurality of photosensitive drums on which toner images of different colors are respectively formed. An endless belt confronts the plurality of photosensitive drums. A drive source drives rotation of the endless belt, or alternatively plural drive sources drive the photosensitive drums to individually rotate. A memory stores pre-measured characteristics of a color misregistration of a color image in a sub-scanning direction of the apparatus, the color image formed by transferring images from respective of the plurality of photosensitive drums. Further, a control unit changes an average running speed of the endless belt, or alternatively an average running speed of at least some of the photosensitive drums, by controlling the drive sources, to compensate for color misregistration, based on the stored characteristics of color misregistration. The belt can either transport a paper sheet or have a color image formed thereon as an intermediate transfer device.

    摘要翻译： 一种彩色图像形成装置，包括分别形成有不同颜色的调色剂图像的多个感光鼓。 环形带面对多个感光鼓。 驱动源驱动环形带的旋转，或者多个驱动源驱动感光鼓以单独旋转。 存储器存储在装置的副扫描方向上的彩色图像的颜色对准的预测特性，通过从多个感光鼓的相应的图像转印图像而形成的彩色图像。 此外，控制单元通过控制驱动源来改变环形带的平均行驶速度，或者替代地，至少一些感光鼓的平均行进速度，以基于存储的颜色重合失调的特性来补偿颜色重合失调 。 带可以输送纸张或者形成在其上的彩色图像作为中间转印装置。

    Solid state imaging device
    9.
    发明授权
    Solid state imaging device 有权
    固态成像装置

    公开(公告)号：US07326958B2

    公开(公告)日：2008-02-05

    申请号：US11406288

    申请日：2006-04-19

    申请人： Yuji Matsuda

    发明人： Yuji Matsuda

    IPC分类号： H01L29/04

    CPC分类号： H01L27/14818 ,  H01L24/05 ,  H01L27/14831

    摘要： A solid state imaging device includes: a plurality of photoelectric conversion elements which are arranged in a two-dimensional matrix on a semiconductor chip; vertical transfer registers including a vertical transfer channel and vertical transfer electrodes, respectively, for transferring signal charge read out of the photoelectric conversion elements in the vertical direction; a horizontal transfer register including a horizontal transfer channel and horizontal transfer electrodes for transferring the signal charge transferred from the vertical transfer registers in the horizontal direction; bus interconnects which are electrically connected to the vertical transfer electrodes and the horizontal transfer electrodes; and pads for external connection which are electrically connected to the bus interconnects. The pads are formed above the bus interconnects and the horizontal transfer electrodes.

    摘要翻译： 固态成像装置包括：在半导体芯片上以二维矩阵排列的多个光电转换元件; 垂直传送寄存器，分别包括垂直传送通道和垂直传输电极，用于传送沿垂直方向从光电转换元件读出的信号电荷; 水平传送寄存器，包括水平传送通道和水平传送电极，用于传送从垂直传送寄存器在水平方向上传送的信号电荷; 电连接到垂直传输电极和水平传输电极的总线互连; 以及电连接到总线互连的用于外部连接的焊盘。 焊盘形成在总线互连和水平传输电极之上。