公开(公告)号：US5302545A

公开(公告)日：1994-04-12

申请号：US73137

申请日：1993-06-07

申请人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

发明人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

IPC分类号： H01L27/148 ,  H01L21/339

CPC分类号： H01L27/14831 ,  Y10S438/954

摘要： A charge-coupled device comprises transfer gate electrodes separated from a substrate by a multilayer insulating film, and gate electrodes of MIS transistors separated from the substrate by a single layer insulating film. The multilayer insulating film comprising at least a lower silicon oxide layer of 10 nm to 200 nm thickness and an upper silicon nitride layer of 10 nm to 100 nm thickness. Since each of the gate insulating films of the MIS transistors is the same layer as the lower silicon oxide layer, there occurs no degradation in the transistor characteristics due to the surface states or the trapping states present within the silicon nitride layer.

摘要翻译： 电荷耦合器件包括通过多层绝缘膜与衬底分离的传输栅电极，以及通过单层绝缘膜与衬底分离的MIS晶体管的栅电极。 所述多层绝缘膜至少包括10nm至200nm厚度的较低氧化硅层和10nm至100nm厚度的上部氮化硅层。 由于MIS晶体管的每个栅极绝缘膜与下部氧化硅层相同，所以由于存在于氮化硅层内的表面状态或俘获状态，晶体管特性不会降低。

公开(公告)号：US5241198A

公开(公告)日：1993-08-31

申请号：US797307

申请日：1991-11-25

申请人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

发明人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

IPC分类号： H01L27/148

CPC分类号： H01L27/14831 ,  Y10S438/954

摘要： A charge-coupled device comprises transfer gate electrodes separated from a substrate by a multi-layer insulating film, and gate electrodes of MIS transistors separated from the substrate by a single layer insulating film. The multilayer insulating film comprising at least a lower silicon oxide layer of 10 nm to 200 nm thickness and an upper silicon nitride layer of 10 nm to 100 nm thickness. Since each of the gate insulating films of the MIS transistors is the same layer as the lower silicon oxide layer, there occurs no degradation in the transistor characteristics due to the surface states or the trapping states present within the silicon nitride layer.

公开(公告)号：US5432363A

公开(公告)日：1995-07-11

申请号：US344416

申请日：1994-11-23

申请人： Wataru Kamisaka ,  Hiroyuki Okada ,  Yuji Matsuda

发明人： Wataru Kamisaka ,  Hiroyuki Okada ,  Yuji Matsuda

IPC分类号： H01L21/3205 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3722 ,  H01L29/78 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14831

摘要： Photoelectric converting parts and vertical CCD register parts are formed in a semiconductor substrate. Polysilicon electrodes are formed on the vertical CCD register parts. On the polysilicon electrodes, polysilicon oxide film and dielectric film are deposited. On the polysilicon electrodes, contact windows are formed by mask matching and etching. The contact windows are formed in the first polysilicon electrode and second polysilicon electrode so as to realize four-phase drive of the solid-state image pickup device. Polysilicon film and tungsten silicide film are formed thereon. By etching these films, a first wiring is formed. A second wiring of aluminum film is formed thereon through an interlayer dielectric film. Hence, a high transfer efficiency and a favorable smear noise characteristic are presented at low illumination.

摘要翻译： 光电转换部件和垂直CCD寄存器部件形成在半导体衬底中。 多晶硅电极形成在垂直CCD寄存器部分上。 在多晶硅电极上沉积多晶硅氧化物膜和电介质膜。 在多晶硅电极上，通过掩模匹配和蚀刻形成接触窗口。 接触窗形成在第一多晶硅电极和第二多晶硅电极中，以实现固态图像拾取装置的四相驱动。 在其上形成多晶硅膜和硅化钨膜。 通过蚀刻这些膜，形成第一布线。 通过层间绝缘膜在其上形成铝膜的第二布线。 因此，在低照度下呈现高转印效率和良好的涂片噪声特性。

公开(公告)号：US5424775A

公开(公告)日：1995-06-13

申请号：US257477

申请日：1994-06-09

申请人： Wataru Kamisaka ,  Hiroyuki Okada ,  Yasuyuki Deguchi

发明人： Wataru Kamisaka ,  Hiroyuki Okada ,  Yasuyuki Deguchi

IPC分类号： H01L27/14 ,  H01L27/148 ,  H01L31/0216 ,  H04N5/335

CPC分类号： H01L31/02164 ,  H01L27/14806 ,  H01L27/14831

摘要： A p type well is formed on a silicon substrate. An n.sup.- type region forming a photo diode is formed in the p type well. A p type region is also formed in the p type well. The p type region is used for surrounding the n type region which becomes a vertical CCD register part. Generally, such a structure is called a Hi-C structure. A P.sup.+ type region for controlling the potential height when transferring is formed between the photo diode and the vertical CCD register part. A P.sup.+ type region is formed for electrical separation. A P.sup.++ type region is formed on the surface of a silicon substrate of the photo diode. On the silicon substrate, a gate oxide film is grown. A silicon nitride film is grown in a specified region on the gate oxide film. On the silicon nitride film, a polysilicon electrode which is a conductive electrode, acting as a driving electrode, is formed. On the surface of the polysilicon electrode, a polysilicon oxide film is grown by thermal oxidation. A silicon nitride film as a nitride insulation film is formed on the surface of the polysilicon oxide film. A top oxide film formed by thermally oxidizing the silicon nitride film is formed on the surface of the silicon nitride film. A refractory metal light-shield film is formed on the surface of the top oxide film. When a Poole-Frenkel current flows through a trap in the silicon nitride film, the oxide films formed above and beneath the silicon nitride film function as a barrier to prevent leakage current from flowing.

摘要翻译： 在硅衬底上形成p型阱。 在p型阱中形成形成光电二极管的n-型区域。 p型区域也形成在p型阱中。 p型区域用于围绕成为垂直CCD寄存器部分的n型区域。 通常，这种结构称为Hi-C结构。 在光电二极管和垂直CCD寄存器部分之间形成用于控制转印时的电位高度的P +型区域。 形成用于电分离的P +型区域。 在光电二极管的硅衬底的表面上形成P ++型区域。 在硅衬底上生长栅极氧化膜。 在栅极氧化膜上的特定区域中生长氮化硅膜。 在氮化硅膜上形成作为驱动电极的作为导电电极的多晶硅电极。 在多晶硅电极的表面上，通过热氧化生长多晶硅氧化物膜。 在多晶硅氧化膜的表面上形成作为氮化物绝缘膜的氮化硅膜。 在氮化硅膜的表面上形成通过热氧化氮化硅膜形成的顶部氧化膜。 在顶部氧化膜的表面上形成难熔金属遮光膜。 当Poole-Frenkel电流流过氮化硅膜中的陷阱时，形成在氮化硅膜上方和下方的氧化物膜起屏障的作用，以防止漏电流流动。

公开(公告)号：US20090189197A1

公开(公告)日：2009-07-30

申请号：US12204317

申请日：2008-09-04

申请人： Ikuya Shibata ,  Wataru Kamisaka ,  Kozo Orihara

发明人： Ikuya Shibata ,  Wataru Kamisaka ,  Kozo Orihara

IPC分类号： H01L27/148

CPC分类号： H01L27/14618 ,  A61B1/05 ,  A61B1/051 ,  H01L2924/0002 ,  H04N5/2253 ,  H04N5/3728 ,  H04N5/374 ,  H04N2005/2255 ,  H01L2924/00

摘要： A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first direction, signals generated by the light-receiving parts; a second transfer section provided at a first side of the imaging region and transferring, in a second direction intersecting the first direction, the signals transferred from the first transfer section; an output circuit for outputting the signals; and bonding pads provided at the first side of the imaging region with the second transfer section sandwiched between the imaging region and the bonding pads. The bonding pads are arranged in a plurality of rows each extending in the second direction. Each of the bonding pads in one of the rows at least partially overlaps one of the bonding pads in another one of the rows when viewed in the first direction.

摘要翻译： 固态成像装置包括：成像区域，包括多个光接收部分; 第一传送部分，设置在成像区域上，并沿第一方向传送由光接收部分产生的信号; 第二传送部，设置在成像区域的第一侧，并且沿与第一方向相交的第二方向传送从第一传送部传送的信号; 用于输出信号的输出电路; 以及设置在成像区域的第一侧的接合焊盘，其中第二传送部分夹在成像区域和接合焊盘之间。 接合焊盘布置成各自沿第二方向延伸的多个行。 当从第一方向观察时，其中一行中的每个接合焊盘至少部分地与另一行中的一个接合焊盘重叠。

公开(公告)号：US20100230730A1

公开(公告)日：2010-09-16

申请号：US12788044

申请日：2010-05-26

申请人： Ikuya SHIBATA ,  Wataru Kamisaka ,  Kozo Orihara

发明人： Ikuya SHIBATA ,  Wataru Kamisaka ,  Kozo Orihara

IPC分类号： H01L27/148

CPC分类号： H01L27/14618 ,  A61B1/05 ,  A61B1/051 ,  H01L2924/0002 ,  H04N5/2253 ,  H04N5/3728 ,  H04N5/374 ,  H04N2005/2255 ,  H01L2924/00

摘要： A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first direction, signals generated by the light-receiving parts; a second transfer section provided at a first side of the imaging region and transferring, in a second direction intersecting the first direction, the signals transferred from the first transfer section; an output circuit for outputting the signals; and bonding pads provided at the first side of the imaging region with the second transfer section sandwiched between the imaging region and the bonding pads. The bonding pads are arranged in a plurality of rows each extending in the second direction. Each of the bonding pads in one of the rows at least partially overlaps one of the bonding pads in another one of the rows when viewed in the first direction.

摘要翻译： 固态成像装置包括：成像区域，包括多个光接收部分; 第一传送部分，设置在成像区域上，并沿第一方向传送由光接收部分产生的信号; 第二传送部，设置在成像区域的第一侧，并且沿与第一方向相交的第二方向传送从第一传送部传送的信号; 用于输出信号的输出电路; 以及设置在成像区域的第一侧的接合焊盘，其中第二传送部分夹在成像区域和接合焊盘之间。 接合焊盘布置成各自沿第二方向延伸的多个行。 当从第一方向观察时，其中一行中的每个接合焊盘至少部分地与另一行中的一个接合焊盘重叠。

公开(公告)号：US07759709B2

公开(公告)日：2010-07-20

申请号：US12204317

申请日：2008-09-04

申请人： Ikuya Shibata ,  Wataru Kamisaka ,  Kozo Orihara

发明人： Ikuya Shibata ,  Wataru Kamisaka ,  Kozo Orihara

IPC分类号： H01L27/00

CPC分类号： H01L27/14618 ,  A61B1/05 ,  A61B1/051 ,  H01L2924/0002 ,  H04N5/2253 ,  H04N5/3728 ,  H04N5/374 ,  H04N2005/2255 ,  H01L2924/00

摘要： A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first direction, signals generated by the light-receiving parts; a second transfer section provided at a first side of the imaging region and transferring, in a second direction intersecting the first direction, the signals transferred from the first transfer section; an output circuit for outputting the signals; and bonding pads provided at the first side of the imaging region with the second transfer section sandwiched between the imaging region and the bonding pads. The bonding pads are arranged in a plurality of rows each extending in the second direction. Each of the bonding pads in one of the rows at least partially overlaps one of the bonding pads in another one of the rows when viewed in the first direction.

摘要翻译： 固态成像装置包括：成像区域，包括多个光接收部分; 第一传送部分，设置在成像区域上，并沿第一方向传送由光接收部分产生的信号; 第二传送部，设置在成像区域的第一侧，并且沿与第一方向相交的第二方向传送从第一传送部传送的信号; 用于输出信号的输出电路; 以及设置在成像区域的第一侧的接合焊盘，其中第二传送部分夹在成像区域和接合焊盘之间。 接合焊盘布置成各自沿第二方向延伸的多个行。 当从第一方向观察时，其中一行中的每个接合焊盘至少部分地与另一行中的一个接合焊盘重叠。