发明授权
US5355010A Semiconductor device with a dual type polycide layer comprising a
uniformly p-type doped silicide
失效
具有双重型多晶硅化物层的半导体器件包括均匀的p型掺杂的硅化物
- 专利标题： Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide
- 专利标题（中）： 具有双重型多晶硅化物层的半导体器件包括均匀的p型掺杂的硅化物
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申请号： US900993申请日： 1992-06-18
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公开(公告)号： US5355010A公开(公告)日： 1994-10-11
- 发明人: Toyokazu Fujii , Yasushi Naito
- 申请人： Toyokazu Fujii , Yasushi Naito
- 申请人地址： JPX Kadoma
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Kadoma
- 优先权： JPX3-150003 19910621
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/768 ; H01L21/8238 ; H01L23/532 ; H01L23/48 ; H01L29/46 ; H01L29/54
摘要：
A semiconductor device comprising a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a polycide film including a polysilicon layer and a silicide layer formed on the insulating film. The polysilicon layer includes a p-type region having p-type impurities diffused therein and an n-type region having n-type impurities diffused therein. The p-type impurities are implanted into the silicide layer in order to have a substantially uniform concentration over the entire potion thereof, so that the p-type impurities in the p-type region of the polysilicon layer do not diffuse into the silicide film by a poet heat treatment.
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