发明授权
- 专利标题: Semiconductor storage device
- 专利标题(中): 半导体存储设备
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申请号: US872841申请日: 1992-04-23
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公开(公告)号: US5359572A公开(公告)日: 1994-10-25
- 发明人: Yoichi Sato , Satoshi Shinagawa , Masao Mizukami
- 申请人: Yoichi Sato , Satoshi Shinagawa , Masao Mizukami
- 申请人地址: JPX Tokyo JPX Kodaira
- 专利权人: Hitachi, Ltd.,Hitachi, VLSI Eng. Corp.
- 当前专利权人: Hitachi, Ltd.,Hitachi, VLSI Eng. Corp.
- 当前专利权人地址: JPX Tokyo JPX Kodaira
- 优先权: JPX3-119284 19910423
- 主分类号: G11C11/41
- IPC分类号: G11C11/41 ; G11C8/10 ; G11C8/12 ; G11C8/14 ; G11C11/418 ; G11C11/419 ; H01L27/10 ; G11C8/00
摘要:
A memory array of a static RAM or the like is divided in a word line extending direction to constitute a plurality of sub memory arrays SM0 to SM7, and array selecting signals for selecting the sub memory arrays and sub word line selecting signals for selecting sub word lines are combined to form word line selecting signals selectively. Main word lines M0000 to M0003 for transmitting those word line signals are arranged in parallel with the sub word lines SW000 to SW255. Sub word line drive circuits SWD000 to SWD255 are also coupled to the individual sub word lines for bringing the corresponding sub word lines selectively into selected states by combining at least 2 bits of the word line selecting signals.
公开/授权文献
- US5939940A Low noise preamplifier for a magnetoresistive data transducer 公开/授权日:1999-08-17
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