发明授权
- 专利标题： Method for the formation of silicon oxide films
- 专利标题（中）： 氧化硅膜形成方法
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申请号： US148744申请日： 1993-10-29
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公开(公告)号： US5370904A公开(公告)日： 1994-12-06
- 发明人: Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
- 申请人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
- 申请人地址： JPX Tokyo
- 专利权人： Dow Corning Toray Silicone Co., Ltd.
- 当前专利权人： Dow Corning Toray Silicone Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-352735 19921210
- 主分类号： C03C17/25
- IPC分类号： C03C17/25 ; C03C17/30 ; C04B41/50 ; C04B41/87 ; C09D183/05 ; C23C18/12 ; H01L21/312 ; H01L21/316 ; B05D5/12
摘要：
Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate and converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in an inert gas atmosphere at 250.degree. C. to 500.degree. C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached .ltoreq.80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane.
公开/授权文献
- US6056696A Frustrated total internal reflection acoustic field sensor 公开/授权日：2000-05-02
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