发明授权
US5401675A Method of depositing conductors in high aspect ratio apertures using a
collimator
失效
使用准直器在高纵横比孔中沉积导体的方法
- 专利标题： Method of depositing conductors in high aspect ratio apertures using a collimator
- 专利标题（中）： 使用准直器在高纵横比孔中沉积导体的方法
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申请号： US36224申请日： 1993-03-24
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公开(公告)号： US5401675A公开(公告)日： 1995-03-28
- 发明人: Pei-Ing P. Lee , Thomas J. Licata , Thomas L. McDevitt , Paul C. Parries , Scott L. Pennington , James G. Ryan , David C. Strippe
- 申请人： Pei-Ing P. Lee , Thomas J. Licata , Thomas L. McDevitt , Paul C. Parries , Scott L. Pennington , James G. Ryan , David C. Strippe
- 专利权人： Lee; Pei-Ing P.,Licata; Thomas J.,Mcdevitt; Thomas L.,Parries; Paul C.,Pennington; Scott L.,Ryan; James G.,Strippe; David C.
- 当前专利权人： Lee; Pei-Ing P.,Licata; Thomas J.,Mcdevitt; Thomas L.,Parries; Paul C.,Pennington; Scott L.,Ryan; James G.,Strippe; David C.
- 主分类号： C23C14/46
- IPC分类号： C23C14/46 ; C23C14/04 ; H01L21/203 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; H05K3/40 ; H01L21/441
摘要：
A process for sputter deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures.
公开/授权文献
- US5975307A Suspension package 公开/授权日：1999-11-02
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