公开(公告)号：US5401675A

公开(公告)日：1995-03-28

申请号：US36224

申请日：1993-03-24

申请人： Pei-Ing P. Lee ,  Thomas J. Licata ,  Thomas L. McDevitt ,  Paul C. Parries ,  Scott L. Pennington ,  James G. Ryan ,  David C. Strippe

发明人： Pei-Ing P. Lee ,  Thomas J. Licata ,  Thomas L. McDevitt ,  Paul C. Parries ,  Scott L. Pennington ,  James G. Ryan ,  David C. Strippe

IPC分类号： C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40 ,  H01L21/441

CPC分类号： C23C14/044 ,  H01L21/76877 ,  H05K3/4076

摘要： A process for sputter deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures.

摘要翻译： 用于溅射沉积的方法，其中高纵横比孔被涂覆有表现出低体积电阻率，低杂质浓度和规则形态的导电膜。 使用具有近似于孔的纵横比的纵横比的准直器。

公开(公告)号：US5494860A

公开(公告)日：1996-02-27

申请号：US404080

申请日：1995-03-14

申请人： Thomas L. McDevitt ,  Scott L. Pennington ,  Michael A. Smey

发明人： Thomas L. McDevitt ,  Scott L. Pennington ,  Michael A. Smey

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/28512 ,  H01L21/76838 ,  Y10S438/909

摘要： A process for decreasing the electrical resistance of a circuit element containing titanium metal, in applications requiring annealing in hydrogen, is disclosed. The process requires, prior to exposure to hydrogen, heating the titanium-containing circuit element in an inert, hydrogen-free atmosphere. The process thus involves a first step of annealing the titanium-containing circuit element in an inert, hydrogen-free atmosphere, such as nitrogen or other inert gas, at 300.degree. C. to 400.degree. C. for 10 to 60 minutes, followed by a second step of annealing in a hydrogen-containing atmosphere, such as hydrogen gas or forming gas, at 350.degree. C. to 450.degree. C. for at least 20 minutes. The resulting structures have both low resistance and tight variability.

摘要翻译： 公开了一种在需要在氢气中进行退火的应用中降低含有钛金属的电路元件的电阻的方法。 该方法在暴露于氢之前需要在惰性，无氢气氛中加热含钛电路元件。 因此，该方法涉及在惰性，无氢气氛（例如氮气或其它惰性气体）中在300℃至400℃下将含钛电路元件退火10至60分钟的第一步骤，随后是 在含氢气氛如氢气或成形气体中在350℃至450℃退火至少20分钟的第二步。 所得结构具有低电阻和紧密变异性。

公开(公告)号：US5226732A

公开(公告)日：1993-07-13

申请号：US876722

申请日：1992-04-17

申请人： James S. Nakos ,  Paul E. Bakeman, Jr. ,  Dale P. Hallock ,  Jerome B. Lasky ,  Scott L. Pennington

发明人： James S. Nakos ,  Paul E. Bakeman, Jr. ,  Dale P. Hallock ,  Jerome B. Lasky ,  Scott L. Pennington

IPC分类号： G01J5/00

CPC分类号： G01J5/0003 ,  G01J5/0007 ,  G01J5/0809 ,  G01J2005/0051

摘要： An improved contactless temperature measurement system is provided which includes a workpiece, a chamber containing the workpiece with the walls thereof being substantially transmissive to radiation at wavelengths other than a given wavelength and substantially reflective at the given wavelength to remove the dependence of the apparent or measured temperature on the workpiece emissivity variations or fluctuations.

摘要翻译： 提供了一种改进的非接触式温度测量系统，其包括工件，包含工件的室，其壁的壁对于给定波长以外的波长的辐射基本上是透射的，并且在给定波长处基本反射，以消除表观或测量 温度对工件的发射率变化或波动。