公开(公告)号：US5401675A

公开(公告)日：1995-03-28

申请号：US36224

申请日：1993-03-24

申请人： Pei-Ing P. Lee ,  Thomas J. Licata ,  Thomas L. McDevitt ,  Paul C. Parries ,  Scott L. Pennington ,  James G. Ryan ,  David C. Strippe

发明人： Pei-Ing P. Lee ,  Thomas J. Licata ,  Thomas L. McDevitt ,  Paul C. Parries ,  Scott L. Pennington ,  James G. Ryan ,  David C. Strippe

IPC分类号： C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40 ,  H01L21/441

CPC分类号： C23C14/044 ,  H01L21/76877 ,  H05K3/4076

摘要： A process for sputter deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures.

摘要翻译： 用于溅射沉积的方法，其中高纵横比孔被涂覆有表现出低体积电阻率，低杂质浓度和规则形态的导电膜。 使用具有近似于孔的纵横比的纵横比的准直器。

公开(公告)号：US5356837A

公开(公告)日：1994-10-18

申请号：US145429

申请日：1993-10-29

申请人： Peter J. Geiss ,  Thomas J. Licata ,  Herbert L. Ho ,  James G. Ryan

发明人： Peter J. Geiss ,  Thomas J. Licata ,  Herbert L. Ho ,  James G. Ryan

IPC分类号： H01L21/28 ,  C30B1/00 ,  H01L21/223 ,  H01L21/225 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/44

CPC分类号： H01L21/28518 ,  C30B1/00 ,  C30B29/10 ,  H01L21/2257

摘要： An epitaxial cobalt silicide film is formed using a thin metal underlayer, which is placed underneath a cobalt layer prior to a heating step which forms the silicide film. More specifically, a refractory metal layer comprising tungsten, chromium, molybdenum, or a silicide thereof, is formed overlying a silicon substrate on a semiconductor wafer. A cobalt layer is formed overlying the refractory metal layer. Next, the wafer is annealed at a temperature sufficiently high to form an epitaxial cobalt silicide film overlying the silicon substrate. Following this annealing step, a cobalt-silicon-refractory metal alloy remains overlying the epitaxial cobalt silicide film. This silicide is then used to form a shallow P-N junction by dopant out-diffusion. First, either a P or N-type dopant is implanted into the silicide film so that substantially none of the dopant is implanted into the underlying silicon substrate. After implanting, the dopant is out-diffused from the silicide film into the underlying silicon substrate at a drive temperature sufficiently high to form the desired P-N junction.

摘要翻译： 使用薄金属底层形成外延钴硅化物膜，该金属底层在形成硅化物膜的加热步骤之前放置在钴层下方。 更具体地，在半导体晶片上的硅衬底上形成包含钨，铬，钼或其硅化物的难熔金属层。 形成覆盖难熔金属层的钴层。 接下来，将晶片在足够高的温度下退火以形成覆盖硅衬底的外延钴硅化物膜。 在该退火步骤之后，钴 - 硅 - 难熔金属合金保留在外延钴硅化物膜上。 然后将该硅化物用于通过掺杂剂外扩散形成浅P-N结。 首先，将P或N型掺杂剂注入到硅化物膜中，使得基本上没有掺杂剂注入到下面的硅衬底中。 在植入之后，掺杂剂在足够高的驱动温度下从硅化物薄膜扩散到下面的硅衬底中以形成所需的P-N结。

公开(公告)号：US5466626A

公开(公告)日：1995-11-14

申请号：US168703

申请日：1993-12-16

申请人： Michael Armacost ,  A. Richard Baker, Jr. ,  Wayne S. Berry ,  Daniel A. Carl ,  Donald M. Kenney ,  Thomas J. Licata

发明人： Michael Armacost ,  A. Richard Baker, Jr. ,  Wayne S. Berry ,  Daniel A. Carl ,  Donald M. Kenney ,  Thomas J. Licata

IPC分类号： H01L21/02 ,  H01L21/033 ,  H01L21/8242

CPC分类号： H01L28/92 ,  B82Y10/00 ,  H01L21/0332 ,  H01L21/0338 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/84 ,  Y10S148/105 ,  Y10S438/947 ,  Y10S438/964 ,  Y10S977/81 ,  Y10S977/888

摘要： The subject invention provides a method of forming recesses in a substrate such as a capacitor so as to increase the surface area thereof and therefore the charge storage capacity of the capacitor. This is accomplished by utilizing a micro mask formed by agglomeration on the surface of the substrate. The agglomerated material, such as gold, titanium nitride or titanium silicide, is used as a mask for selectively etching the substrate to form recesses therein. Alternatively, an oxide transfer mask can be utilized with the agglomerated material micro mask to etch the substrate.

摘要翻译： 本发明提供一种在诸如电容器的衬底中形成凹槽的方法，以增加其表面积，从而增加电容器的电荷存储容量。 这是通过利用在基板的表面上通过附聚形成的微掩模来实现的。 将聚集的材料，例如金，氮化钛或硅化钛用作掩模，用于选择性地蚀刻基板以在其中形成凹部。 或者，氧化物转移掩模可以与聚集的材料微掩模一起使用以蚀刻基底。

公开(公告)号：US06508919B1

公开(公告)日：2003-01-21

申请号：US09723874

申请日：2000-11-28

申请人： Thomas J. Licata ,  Joseph T. Hillman

发明人： Thomas J. Licata ,  Joseph T. Hillman

IPC分类号： C23C1434

CPC分类号： H01L21/76831 ,  H01L21/76846 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming diffusion barrier stacks on a dielectric for a dual damascene metal chip-level interconnect, and a diffusion barrier stack produced thereby. Alternating layers of a metal and an electrically resistive diffusion barrier are deposited on a dielectric substrate, with different layers having different thicknesses appropriate to their functions in the device. In an example of the present invention, alternating layers of tantalum and tantalum nitride are deposited on a dielectric substrate.

摘要翻译： 在用于双镶嵌金属芯片级互连的电介质上形成扩散阻挡层的方法，以及由此产生的扩散阻挡叠层。 金属和电阻扩散阻挡层的交替层沉积在电介质基底上，其中不同的层具有不同于其在器件中的功能的厚度。 在本发明的一个实例中，钽和氮化钽的交替层沉积在电介质基片上。

公开(公告)号：US6132564A

公开(公告)日：2000-10-17

申请号：US971512

申请日：1997-11-17

申请人： Thomas J. Licata

发明人： Thomas J. Licata

IPC分类号： C23C14/02 ,  C23C16/02 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  C23C14/34

CPC分类号： C23C14/022 ,  H01L21/28556

摘要： A method is provided of cleaning device surfaces for the metallization thereof by treating the surfaces in a chamber equipped for ionized physical vapor deposition or other plasma-based metal deposition process. The surfaces are plasma etched, preferably in a chamber in which the next metal layer is to be deposited onto the surfaces. Also or in the alternative, the surfaces are plasma etched with a plasma containing ions of the metal to be deposited. Preferably also, the etching process is followed by depositing a film of the metal, preferably by ionized physical vapor deposition, in the chamber. The metal may, for example, be titanium that is sputtered from a target within the chamber. The process of depositing the metal, where the metal is titanium, may, for example, be followed by the deposition of a titanium nitride layer. The process steps may be used to passivate the surfaces for transfer of the substrate containing the device surfaces through an oxygen or water vapor containing atmosphere or through another atmosphere containing potential contaminants such as through the transfer chamber of a cluster tool to which are connected CVD or other chemical processing modules. In the preferred embodiment, etching is achieved by maintaining a high ion fraction and high bombardment energy, for example, by applying a high negative bias to the substrate, operating the plasma in a net etching mode, then, by lowering the bombardment energy, for example by lowering the bias voltage, or by lowering the ion fraction, such as by increasing sputtering power, or decreasing plasma power, chamber pressure, a net deposition of the metal by IPVD is brought about.

摘要翻译： 提供了一种通过处理在用于离子化物理气相沉积或其它等离子体金属沉积工艺的室内的表面进行金属化的清洁装置表面的方法。 表面被等离子体蚀刻，优选在其中将下一个金属层沉积到表面上的腔室中。 此外或在替代方案中，用包含待沉积金属的离子的等离子体等离子体蚀刻表面。 优选地，蚀刻工艺之后是将优选通过电离物理气相沉积的金属膜沉积在腔室中。 金属可以是例如从室内的靶溅射的钛。 沉积金属（其中金属是钛）的过程例如可以是沉积氮化钛层。 处理步骤可以用于钝化表面，以便将含有装置表面的基板通过含氧气体或水蒸汽的气氛或通过另外的气氛，其中包含潜在的污染物，例如通过连接到CVD或其上的簇工具的传送室 其他化学处理模块。 在优选实施例中，通过保持高离子分数和高轰击能量来实现蚀刻，例如通过向基板施加高负偏压，以净蚀刻模式操作等离子体，然后通过降低轰击能量来获得 例如通过降低偏置电压，或者通过降低离子分数，例如通过增加溅射功率，或降低等离子体功率，室压力，产生通过IPVD的金属的净沉积。

公开(公告)号：US6117279A

公开(公告)日：2000-09-12

申请号：US190515

申请日：1998-11-12

申请人： Jason Smolanoff ,  Doug Caldwell ,  Jim Zibrida ,  Bruce Gittleman ,  Thomas J. Licata

发明人： Jason Smolanoff ,  Doug Caldwell ,  Jim Zibrida ,  Bruce Gittleman ,  Thomas J. Licata

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  D06F29/00

CPC分类号： H01J37/32477 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3405

摘要： An ionized physical vapor deposition method and apparatus are provided which employs a magnetron magnetic field produced by cathode magnet structure behind a sputtering target to produce a main sputtering plasma, and an RF inductively coupled field produced by an RF coil outside of and surrounding the vacuum of the chamber to produce a secondary plasma in the chamber between the target and a substrate to ionize sputtered material passing from the target to the substrate so that the sputtered material can be electrically or magnetically steered to arrive at the substrate at right angles. A circumferentially interrupted shield or shield structure in the chamber protects the window from material deposits. A low pass LC filter circuit allows the shield to float relative to the RF voltage but to dissipate DC potential on the shield. Advantages provided are that loss of electrons and ions from the secondary plasma is prevented, preserving plasma density and providing high ionization fraction of the sputtered material arriving at the substrate.

摘要翻译： 提供一种电离物理气相沉积方法和装置，其采用由溅射靶之后的阴极磁体结构产生的磁控管磁场，以产生主溅射等离子体，以及由RF线圈产生的RF电感耦合场， 所述腔室在靶和衬底之间的腔室中产生二次等离子体，以将从目标通过的溅射材料离子化到衬底，使得溅射材料可以被电或磁力转向，以直角到达衬底。 室中的周向中断的屏蔽或屏蔽结构保护窗户免受材料沉积。 低通LC滤波器电路允许屏蔽相对于RF电压浮动，但是消散屏蔽上的DC电位。 所提供的优点是防止来自次级等离子体的电子和离子的损失，保持等离子体密度并提供到达衬底的溅射材料的高离子化分数。

公开(公告)号：US5576579A

公开(公告)日：1996-11-19

申请号：US371627

申请日：1995-01-12

申请人： Paul D. Agnello ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Christopher V. Jahnes ,  Thomas J. Licata ,  Ronnen A. Roy

发明人： Paul D. Agnello ,  Cyril Cabral, Jr. ,  Alfred Grill ,  Christopher V. Jahnes ,  Thomas J. Licata ,  Ronnen A. Roy

IPC分类号： H01L21/28 ,  H01L21/46 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/092 ,  H01L27/105 ,  H01L27/108 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/94 ,  H01L29/43

CPC分类号： H01L21/28185 ,  H01L21/28061 ,  H01L21/28202 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4941 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518 ,  H01L29/94

摘要： A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.

摘要翻译： 具有氧化或掺杂剂扩散阻挡层的多层结构，其由耐氧化的难熔金属 - 硅 - 氮的导电的，热稳定的材料制成，防止掺杂剂从硅的扩散扩散，并且具有宽的工艺窗口，其中难熔金属 选自Ta，W，Nb，V，Ti，Zr，Hf，Cr和Mo。

公开(公告)号：US5545590A

公开(公告)日：1996-08-13

申请号：US298481

申请日：1994-08-29

申请人： Thomas J. Licata

发明人： Thomas J. Licata

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44

CPC分类号： H01L21/76838

摘要： An improved method of forming interlayer interconnections employs the same material (or materials that are etched similarly) for both the stud and the upper interconnect in which the stud is surrounded by a collar of conductive material that is also resistant to the etching process used to define the upper wire interconnect.

摘要翻译： 形成层间互连的改进方法使用与螺柱和上部互连相同的材料（或类似地蚀刻的材料），其中螺柱被导电材料的环圈围绕，其也抵抗用于限定的蚀刻工艺 上线互连。

公开(公告)号：US06730605B2

公开(公告)日：2004-05-04

申请号：US09833879

申请日：2001-04-12

申请人： Chantal Arena-Foster ,  Robert F. Foster ,  Joseph T. Hillman ,  Thomas J. Licata ,  Tugrul Yasar

发明人： Chantal Arena-Foster ,  Robert F. Foster ,  Joseph T. Hillman ,  Thomas J. Licata ,  Tugrul Yasar

IPC分类号： C23C1600

CPC分类号： C23C14/046 ,  C23C14/58 ,  C23C14/5846 ,  C23C14/5873 ,  H01L21/76877

摘要： A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent nonuniformity of the deposited copper film thickness by improving the uniformity of thickness of the copper film on the covered surfaces, such as vertical and bottom surfaces. The method provides the advantages of good adhesion and good grain growth and orientation that are achieved with copper deposited by PVD, and also provides the good step coverage as achieved with copper deposited by CVD.

摘要翻译： 将PVD沉积的固体铜重新分布在晶片形貌上的方法。 沉积的铜溶解在流体中用于再分配。 铜再分布通过改善被覆表面上的铜膜的厚度的均匀性（例如垂直和底表面）来防止沉积的铜膜厚度的固有不均匀性。 该方法提供了通过PVD沉积的铜实现的良好的粘附性和良好的晶粒生长和取向的优点，并且还提供了通过CVD沉积的铜实现的良好的阶跃覆盖。

公开(公告)号：US6080287A

公开(公告)日：2000-06-27

申请号：US73141

申请日：1998-05-06

申请人： John S. Drewery ,  Thomas J. Licata

发明人： John S. Drewery ,  Thomas J. Licata

IPC分类号： C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： C23C14/345 ,  C23C14/35 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/3408 ,  H01J37/3429

摘要： Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from an annular magnetron sputtering target. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Faraday type shields physically shield the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target to wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.

摘要翻译： 电离物理气相沉积（IPVD）是通过一种用于从环形磁控溅射靶溅射导电金属涂层材料的设备的方法提供的。 溅射的材料在目标和基板之间的处理空间中被离子化，通过在空间中产生致密的等离子体，其能量从位于真空室外面的线圈耦合到位于开口中心的室壁中的电介质窗口之后 溅射靶。 法拉第型屏蔽物理屏蔽窗户，防止涂料涂覆窗户，同时允许将线圈的能量感应耦合到处理空间。 线圈在目标平面中或靶子后面的位置允许选择目标晶片间距以优化膜沉积速率和均匀性，并且还提供环形源的优点，而没有与不期望的相关联的问题 沉积在目标中心的开口处。