This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The method comprising: depositing an TFE AF layer 36 on a substrate; combining a fluorosurfactant with a first material to produce a second material 38; and depositing the second material 38 on the TFE AF layer 36. The method may include: patterning and etching the second material; removing the second material; and forming a third material 42 on the TFE AF layer 44. The third material may be a metal or a semiconductor. The ZFSNF fluorosurfactant may be combined with a photoresist and then patterned and etched. The TFE AF layer may also be heated. A second coating of the second material may also be added.