发明授权
US5422295A Method for forming a semiconductor memory device having a vertical
multi-layered storage electrode
失效
用于形成具有垂直多层存储电极的半导体存储器件的方法
- 专利标题： Method for forming a semiconductor memory device having a vertical multi-layered storage electrode
- 专利标题（中）： 用于形成具有垂直多层存储电极的半导体存储器件的方法
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申请号： US164671申请日： 1993-12-10
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公开(公告)号： US5422295A公开(公告)日： 1995-06-06
- 发明人: Young-jae Choi , Tae-young Chung , Jong-woo Park , Young-pil Kim
- 申请人： Young-jae Choi , Tae-young Chung , Jong-woo Park , Young-pil Kim
- 申请人地址： KRX Suwon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Suwon
- 优先权： KRX92-23802 19921210; KRX93-4636 19930324
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/265 ; H01L21/822 ; H01L21/8242 ; H01L27/10 ; H01L27/108 ; H01L21/70 ; H01L27/00
摘要：
A manufacturing method for a semiconductor memory device including a capacitor having a double fin-shaped structure is provided, wherein a storage electrode is formed by applying a thick planar material capable of being wet-etched between the double fins consisting of conductive layers. The storage electrode is formed by forming a thin, high temperature oxide film having an etching rate which is great. Thus, the resulting memory cell's topography is improved and damage to the storage electrode is decreased.
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