发明授权
- 专利标题： Plasma etching system
- 专利标题（中）： 等离子体蚀刻系统
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申请号： US138039申请日： 1993-10-19
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公开(公告)号： US5423936A公开(公告)日： 1995-06-13
- 发明人: Kazushi Tomita , Yoshikazu Ito , Motohiro Hirano , Akira Nozawa , Hiromitsu Matsuo , Shunichi Iimuro , Shigeki Tozawa , Yutaka Miura
- 申请人： Kazushi Tomita , Yoshikazu Ito , Motohiro Hirano , Akira Nozawa , Hiromitsu Matsuo , Shunichi Iimuro , Shigeki Tozawa , Yutaka Miura
- 申请人地址： JPX Tokyo JPX Tokyo JPX Tokyo JPX Nirasaki
- 专利权人： Hitachi, Ltd.,Hitachi Tokyo Electronics, Co., Ltd.,Tokyo Electron Limited,Tokyo Electron Yamanashi Limited
- 当前专利权人： Hitachi, Ltd.,Hitachi Tokyo Electronics, Co., Ltd.,Tokyo Electron Limited,Tokyo Electron Yamanashi Limited
- 当前专利权人地址： JPX Tokyo JPX Tokyo JPX Tokyo JPX Nirasaki
- 优先权： JPX4-306121 19921019
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/00
摘要：
The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.
公开/授权文献
- US4812517A Dispersants resistant to color change 公开/授权日：1989-03-14