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    Multi-zone substrate temperature control system and method of operating
    1.
    发明授权
    Multi-zone substrate temperature control system and method of operating 有权
    多区域基板温度控制系统及其操作方法

    公开(公告)号：US08343280B2

    公开(公告)日：2013-01-01

    申请号：US11390471

    申请日：2006-03-28

    申请人： Shunichi Iimuro

    发明人： Shunichi Iimuro

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/67248 ,  H01L21/68714

    摘要： A method and system for multi-zone control of temperature for a substrate is described. The temperature control system comprises a heat exchanger coupled to two or more fluid channels in a substrate holder configured to support the substrate. The heat exchanger is configured to adjust the temperature of a heat transfer fluid flowing through the two or more fluid channels. The temperature control system further comprises a heat transfer unit having an inlet that is configured to receive heat transfer fluid from the heat exchanger at a bulk fluid temperature. Additionally, the heat transfer unit comprises a first outlet configured to couple a portion of the heat transfer fluid at a first temperature less than the bulk temperature to a first fluid channel of the two or more fluid channels, and a second outlet configured to couple a remaining portion of the heat transfer fluid at a second temperature greater than the bulk fluid temperature to a second fluid channel of the two or more fluid channels.

    摘要翻译： 描述了用于衬底温度多区域控制的方法和系统。 温度控制系统包括耦合到衬底保持器中的两个或更多个流体通道的热交换器，其被配置为支撑衬底。 热交换器被配置为调节流过两个或更多个流体通道的传热流体的温度。 温度控制系统还包括具有入口的传热单元，该入口构造成在散装流体温度下从热交换器接收传热流体。 另外，传热单元包括第一出口，第一出口构造成将第一温度小于体积温度的传热流体的一部分耦合到两个或更多个流体通道的第一流体通道，以及第二出口，其配置成将 传热流体的剩余部分在大于主体流体温度的第二温度下相对于两个或更多个流体通道的第二流体通道。

    Plasma processing method and plasma processing apparatus
    2.
    发明授权
    Plasma processing method and plasma processing apparatus 失效
    等离子体处理方法和等离子体处理装置

    公开(公告)号：US6110287A

    公开(公告)日：2000-08-29

    申请号：US843129

    申请日：1997-04-28

    申请人： Izumi Arai ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Yoshinobu Mitano ,  Shunichi Iimuro ,  Kazuo Fukasawa ,  Yutaka Miura ,  Shozo Hosoda

    发明人： Izumi Arai ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Yoshinobu Mitano ,  Shunichi Iimuro ,  Kazuo Fukasawa ,  Yutaka Miura ,  Shozo Hosoda

    IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/67069 ,  C23C16/5096 ,  H01J37/3244

    摘要： A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.

    摘要翻译： 一种等离子体处理方法，其中将高频电力供应到其中安装有被处理物体的处理室，从而在处理室中产生等离子体，并且在等离子体的气氛中对物体进行处理，其中 高频功率受到低频功率的调制。 在一个实施例中，通过使用具有随时间变化的电流方向的电力在处理室中产生等离子体，并且待处理物体在等离子体的气氛中被处理，其中具有基本频率的功率为 以频率等于基本频率的n倍（n =整数）的频率进行频率调制。 在本发明的等离子体处理装置中，当通过形成在电极中的第一气体导入孔将处理气体供给到处理室时，对被保持在对置电极上的被处理物进行等离子体处理。 提供了一种电阻，其应用[施加装置]对来自气体导入装置的气体导入孔流向处理室的工艺气体施加阻力，使得当气体导入装置中的过程压力 在处理室中设定为0.5乇以下。

    Plasma etching system
    3.
    发明授权
    Plasma etching system 失效
    等离子体蚀刻系统

    公开(公告)号：US5423936A

    公开(公告)日：1995-06-13

    申请号：US138039

    申请日：1993-10-19

    申请人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

    发明人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

    IPC分类号： H01J37/32 ,  H01L21/00

    CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32724 ,  H01J2237/3347

    摘要： The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

    摘要翻译： 本发明提供了一种等离子体蚀刻系统，其包括封装等离子体的处理室，用于抽出处理室的装置，用于支撑基板的卡盘电极，与所述卡盘电极相对设置并设有大量小孔的喷淋电极 用于在所述卡盘电极和所述淋浴电极之间施加等离子体电压的电源，与所述淋浴电极的所述小孔连通的气体供给装置，用于通过所述小孔将等离子体形成气体供给到所述处理室，以及用于控制 所述气体供给装置使得所述等离子体形成气体以至少620kg / m 2 / hr的质量流量流过所述小孔。

    Plasma etching system and plasma etching method
    5.
    发明授权
    Plasma etching system and plasma etching method 失效
    等离子体蚀刻系统和等离子体蚀刻方法

    公开(公告)号：US5593540A

    公开(公告)日：1997-01-14

    申请号：US429648

    申请日：1995-04-27

    申请人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

    发明人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

    IPC分类号： H01J37/32 ,  B44C1/22

    CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32724 ,  H01J2237/3347

    摘要： The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

    摘要翻译： 本发明提供了一种等离子体蚀刻系统，其包括封装等离子体的处理室，用于抽出处理室的装置，用于支撑基板的卡盘电极，与所述卡盘电极相对设置并设有大量小孔的喷淋电极 用于在所述卡盘电极和所述淋浴电极之间施加等离子体电压的电源，与所述淋浴电极的所述小孔连通的气体供给装置，用于通过所述小孔将等离子体形成气体供给到所述处理室，以及用于控制 所述气体供给装置使得所述等离子体形成气体以至少620kg / m 2 / hr的质量流量流过所述小孔。

    Multi-zone substrate temperature control system and method of operating
    6.
    发明申请
    Multi-zone substrate temperature control system and method of operating 有权
    多区域基板温度控制系统及其操作方法

    公开(公告)号：US20070235134A1

    公开(公告)日：2007-10-11

    申请号：US11390471

    申请日：2006-03-28

    申请人： Shunichi Iimuro

    发明人： Shunichi Iimuro

    IPC分类号： G06F19/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/00

    CPC分类号： H01L21/67248 ,  H01L21/68714

    摘要： A method and system for multi-zone control of temperature for a substrate is described. The temperature control system comprises a heat exchanger coupled to two or more fluid channels in a substrate holder configured to support the substrate. The heat exchanger is configured to adjust the temperature of a heat transfer fluid flowing through the two or more fluid channels. The temperature control system further comprises a heat transfer unit having an inlet that is configured to receive heat transfer fluid from the heat exchanger at a bulk fluid temperature. Additionally, the heat transfer unit comprises a first outlet configured to couple a portion of the heat transfer fluid at a first temperature less than the bulk temperature to a first fluid channel of the two or more fluid channels, and a second outlet configured to couple a remaining portion of the heat transfer fluid at a second temperature greater than the bulk fluid temperature to a second fluid channel of the two or more fluid channels.

    摘要翻译： 描述了用于衬底温度多区域控制的方法和系统。 温度控制系统包括耦合到衬底保持器中的两个或更多个流体通道的热交换器，其被配置为支撑衬底。 热交换器被配置为调节流过两个或更多个流体通道的传热流体的温度。 温度控制系统还包括具有入口的传热单元，该入口构造成在散装流体温度下从热交换器接收传热流体。 另外，传热单元包括第一出口，第一出口构造成将第一温度小于体积温度的传热流体的一部分耦合到两个或更多个流体通道的第一流体通道，以及第二出口，其配置成将 传热流体的剩余部分在大于主体流体温度的第二温度下相对于两个或更多个流体通道的第二流体通道。

    Plasma etching method
    7.
    发明授权
    Plasma etching method 失效
    等离子蚀刻法

    公开(公告)号：US06589435B1

    公开(公告)日：2003-07-08

    申请号：US09674482

    申请日：2000-11-08

    申请人： Shin Okamoto ,  Shunichi Iimuro

    发明人： Shin Okamoto ,  Shunichi Iimuro

    IPC分类号： H01L213065

    CPC分类号： H01L21/31116

    摘要： Contact holes (36a, 36b) are formed by means of plasma etching, such that the contact holes are formed from the top surface of a silicon oxide insulating film (31) down to a wiring layer (33a) at a deep position and a wiring layer (33b) at a shallow position, respectively, which are embedded in the insulating film (31). A process gas containing C4F8, CO, and Ar is used, while the process pressure is set to be from 30 to 60 mTorr, and the partial pressure of the C4F8 gas is set to be from 0.07 to 0.35 mTorr. Under these conditions, the process gas is turned into plasma, and the insulating film (31) is etched with the plasma to form the contact holes (36a, 36b).

    摘要翻译： 通过等离子体蚀刻形成接触孔（36a，36b），使得接触孔从氧化硅绝缘膜（31）的顶表面形成为深度到布线层（33a）和布线 层（33b）分别嵌入在绝缘膜（31）中的浅位置处。 使用含有C4F8，CO和Ar的工艺气体，同时将工艺压力设定为30〜60mTorr，将C4F8气体的分压设定为0.07〜0.35mTorr。 在这些条件下，处理气体变成等离子体，用等离子体蚀刻绝缘膜（31），形成接触孔（36a，36b）。

    Anisotropic etching method and apparatus
    8.
    发明授权
    Anisotropic etching method and apparatus 失效
    各向异性蚀刻方法和装置

    公开(公告)号：US5445709A

    公开(公告)日：1995-08-29

    申请号：US154566

    申请日：1993-11-19

    申请人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazuhsi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

    发明人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazuhsi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

    IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/06

    CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32724 ,  H01J2237/3345

    摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..

    摘要翻译： 平行板等离子体蚀刻装置包括布置在处理室中的基座电极和淋浴电极。 将半导体晶片放置在基座电极上。 在淋浴电极中形成由多个处理气体供给孔限定的淋浴区域。 淋浴电极被冷却块冷却，使淋浴电极的有效电极部分具有温度梯度，使得有效电极部分的中心部分的温度低于有效电极周边部分的温度 一部分。 淋浴区域的直径被选择为小于晶片的直径5至25％，使得由有效电极部分的温度梯度引起的晶片上的蚀刻各向异性程度的平面均匀度的降低被补偿 。 选择有效电极部分的直径大于晶片的尺寸5至35％，使得通过蚀刻形成的待蚀刻侧壁的锥角设定为85°至90°。