公开(公告)号：US5423936A

公开(公告)日：1995-06-13

申请号：US138039

申请日：1993-10-19

申请人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

发明人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32724 ,  H01J2237/3347

摘要： The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

摘要翻译： 本发明提供了一种等离子体蚀刻系统，其包括封装等离子体的处理室，用于抽出处理室的装置，用于支撑基板的卡盘电极，与所述卡盘电极相对设置并设有大量小孔的喷淋电极 用于在所述卡盘电极和所述淋浴电极之间施加等离子体电压的电源，与所述淋浴电极的所述小孔连通的气体供给装置，用于通过所述小孔将等离子体形成气体供给到所述处理室，以及用于控制 所述气体供给装置使得所述等离子体形成气体以至少620kg / m 2 / hr的质量流量流过所述小孔。

公开(公告)号：US5593540A

公开(公告)日：1997-01-14

申请号：US429648

申请日：1995-04-27

申请人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

发明人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

IPC分类号： H01J37/32 ,  B44C1/22

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32724 ,  H01J2237/3347

摘要： The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

摘要翻译： 本发明提供了一种等离子体蚀刻系统，其包括封装等离子体的处理室，用于抽出处理室的装置，用于支撑基板的卡盘电极，与所述卡盘电极相对设置并设有大量小孔的喷淋电极 用于在所述卡盘电极和所述淋浴电极之间施加等离子体电压的电源，与所述淋浴电极的所述小孔连通的气体供给装置，用于通过所述小孔将等离子体形成气体供给到所述处理室，以及用于控制 所述气体供给装置使得所述等离子体形成气体以至少620kg / m 2 / hr的质量流量流过所述小孔。