发明授权
- 专利标题： Electron-beam exposure system for reduced distortion of electron beam spot
- 专利标题（中）： 电子束曝光系统，减少电子束斑变形
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申请号： US319022申请日： 1994-10-06
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公开(公告)号： US5444257A公开(公告)日： 1995-08-22
- 发明人: Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
- 申请人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
- 申请人地址： JPX Kawasaki JPX Kasugai
- 专利权人： Fujitsu Limited,Fujitsu VLSI Limited
- 当前专利权人： Fujitsu Limited,Fujitsu VLSI Limited
- 当前专利权人地址： JPX Kawasaki JPX Kasugai
- 优先权： JPX5-337223 19931228
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01J37/153 ; H01J37/00
摘要：
An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.
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