公开(公告)号：US08382911B2

公开(公告)日：2013-02-26

申请号：US13340251

申请日：2011-12-29

申请人： Yoshihisa Oae ,  Youichi Shimizu

发明人： Yoshihisa Oae ,  Youichi Shimizu

IPC分类号： B08B7/04

CPC分类号： G03F7/70925 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70716 ,  G03F7/70775 ,  G03F7/70816 ,  G03F7/70916 ,  H01J37/3174 ,  H01J37/32862 ,  H01L21/67028

摘要： A method for a stage device of an electron beam exposure system which conducts a cleaning operation and an electron beam (EB) exposure operation is disclosed. The method includes the steps of moving a movable stage within a predetermined range and regulating pressure of gas supplied to an air bearing; and setting a floating height of the movable stage in the cleaning operation lower than that in the EB exposure operation and setting the pressure in a differential pumping portion in the cleaning operation equal to that in the EB exposure operation, or setting the floating height of the movable stage in the cleaning operation equal to that in the EB exposure operation and setting the pressure in the differential pumping portion in the cleaning operation higher than that in the EB exposure operation.

摘要翻译： 公开了一种进行清洗操作和电子束（EB）曝光操作的电子束曝光系统的平台装置的方法。 该方法包括以下步骤：将可移动台移动到预定范围内并调节供应给空气轴承的气体的压力; 并且在清洁操作中将移动台的浮动高度设置为低于EB曝光操作中的浮动高度，并将清洁操作中的差动泵送部分中的压力设置为等于EB曝光操作中的压力，或者设置浮动高度 清洁操作中的可移动级等于EB曝光操作中的可移动级，并且将清洁操作中的差动泵送部中的压力设置为高于EB曝光操作中的压力。

公开(公告)号：US5965895A

公开(公告)日：1999-10-12

申请号：US964331

申请日：1997-11-04

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.

摘要翻译： 一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。 基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。 检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

公开(公告)号：US5546319A

公开(公告)日：1996-08-13

申请号：US379712

申请日：1995-01-27

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317 ,  H01J37/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化， 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标 在晶片区域和芯片区域中的转换。 为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

公开(公告)号：US5444257A

公开(公告)日：1995-08-22

申请号：US319022

申请日：1994-10-06

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Akio Yamada ,  Junichi Kai ,  Yoshihisa Oae ,  Keiji Yamada ,  Toru Oshima

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Akio Yamada ,  Junichi Kai ,  Yoshihisa Oae ,  Keiji Yamada ,  Toru Oshima

IPC分类号： H01L21/027 ,  H01J37/153 ,  H01J37/00

CPC分类号： H01J37/153 ,  H01J2237/1504 ,  H01J2237/1532 ,  H01J2237/3175

摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.

摘要翻译： 电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与 在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

公开(公告)号：US5430304A

公开(公告)日：1995-07-04

申请号：US327810

申请日：1994-10-24

申请人： Hiroshi Yasuda ,  Yasushi Takahashi ,  Yoshihisa Oae ,  Tomohiko Abe ,  Shunsuke Fueki

发明人： Hiroshi Yasuda ,  Yasushi Takahashi ,  Yoshihisa Oae ,  Tomohiko Abe ,  Shunsuke Fueki

IPC分类号： H01L21/027 ,  H01J37/302

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/0435 ,  H01J2237/31776

摘要： A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged particle beam and operate to control the on/off exposure characteristic of the charged particle beam. The method includes: (1) selectively designating bit positions of successive n-bit width data blocks of the pattern, each n-bit width data block stored within a row of the pattern; (2) successively reading each n-bit width data block; (3) forming successive rows of unit pattern data from the successively designated and read n-bit width data block, each successive row corresponding to a successively designated and read n-bit width data block; (4) storing the successive rows of unit pattern data to form unit pattern data in bit matrix form having m columns and n rows; and (5) sequentially supplying the successive rows of unit pattern data to the blanking aperture array to control the on/off exposure characteristic of the charged particle beam.

摘要翻译： 一种带电粒子束曝光方法，其中被摄体经由具有开/关曝光特性的带电粒子束曝光于图案。 消隐孔径阵列具有单独/对应于带电粒子束的相应扫描位置的n个打开/关闭装置，并且用于控制带电粒子束的开/关曝光特性。 该方法包括：（1）有选择地指定图案的连续n位宽度数据块的位位置，每个n位宽数据块存储在该行图案中; （2）连续读取每个n位宽数据块; （3）从连续指定和读取的n位宽度数据块形成连续的单位图形数据行，每个连续行对应于连续指定和读取的n位宽度数据块; （4）存储连续的单位图形数据行以形成具有m列和n行的位矩阵形式的单位图形数据; 并且（5）将连续行的单位图形数据顺序地提供给消隐孔径阵列，以控制带电粒子束的接通/断开曝光特性。

公开(公告)号：US5359202A

公开(公告)日：1994-10-25

申请号：US95424

申请日：1993-07-23

申请人： Hiroshi Yasuda ,  Yoshihisa Oae ,  Tomohiko Abe

发明人： Hiroshi Yasuda ,  Yoshihisa Oae ,  Tomohiko Abe

IPC分类号： G03F7/20 ,  H01J37/06 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/30

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/31774

摘要： An electron beam exposure apparatus is provided with an electron gun emitting an electron beam, a blanking aperture array including a plurality of two-dimensionally arranged blanking apertures for selectively deflecting the electron beam passing through the blanking apertures in a predetermined direction so as to shape the electron beam into a plurality of electron beams, a deflection device for regularly deflecting the electron beams passed through the blanking aperture array, and an electron beam controller for controlling the electron beams passed through the blanking aperture array so as to irradiate and expose an object surface. The electron gun has a needle shaped chip which comprises a pair of sloping surfaces which are faces, and a vertex portion connecting the sloping surfaces and forming an inverted V-shape at a tip end of the needle shaped chip when viewed in a direction in which the vertex portion extends.

摘要翻译： 电子束曝光装置设置有发射电子束的电子枪，包括多个二维布置的消隐孔的消隐孔阵列，用于在预定方向上选择性地偏转通过消隐孔的电子束，以使 电子束形成多个电子束，用于规则地偏转通过消隐孔阵列的电子束的偏转装置和用于控制通过消隐孔阵列的电子束以照射和暴露物体表面的电子束控制器 。 电子枪具有针状芯片，该针状芯片包括一对<100>倾斜表面，以及顶点部分，其连接倾斜表面并在针状芯片的尖端处形成倒V形 顶点部分延伸的方向。

公开(公告)号：US5260579A

公开(公告)日：1993-11-09

申请号：US851400

申请日：1992-03-13

申请人： Hiroshi Yasuda ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Akio Yamada ,  Yoshihisa Oae ,  Junichi Kai ,  Shunsuke Fueki ,  Kenichi Kawashima

发明人： Hiroshi Yasuda ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Akio Yamada ,  Yoshihisa Oae ,  Junichi Kai ,  Shunsuke Fueki ,  Kenichi Kawashima

IPC分类号： H01J37/09 ,  H01J37/317 ,  H01J37/302

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3177 ,  H01J2237/0435

摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

公开(公告)号：US5631113A

公开(公告)日：1997-05-20

申请号：US435157

申请日：1995-05-05

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Akio Yamada ,  Junichi Kai ,  Yoshihisa Oae ,  Keiji Yamada ,  Toru Oshima

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Akio Yamada ,  Junichi Kai ,  Yoshihisa Oae ,  Keiji Yamada ,  Toru Oshima

IPC分类号： H01L21/027 ,  H01J37/153 ,  G03L5/00 ,  H01J37/00

CPC分类号： H01J37/153 ,  H01J2237/1504 ,  H01J2237/1532 ,  H01J2237/3175

摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.

摘要翻译： 电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与 在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

公开(公告)号：US5614725A

公开(公告)日：1997-03-25

申请号：US610190

申请日：1996-03-04

申请人： Yoshihisa Oae ,  Tomohiko Abe ,  Soichiro Arai ,  Shigeru Maruyama ,  Hiroshi Yasuda ,  Kenichi Miyazawa ,  Junichi Kai ,  Takamasa Satoh ,  Keiichi Betsui ,  Hideki Nasuno

发明人： Yoshihisa Oae ,  Tomohiko Abe ,  Soichiro Arai ,  Shigeru Maruyama ,  Hiroshi Yasuda ,  Kenichi Miyazawa ,  Junichi Kai ,  Takamasa Satoh ,  Keiichi Betsui ,  Hideki Nasuno

IPC分类号： H01J37/147 ,  H01J37/30 ,  H01J37/302 ,  H01J37/304 ,  H01J37/317

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/30416 ,  H01J2237/31762 ,  H01L2223/54466

摘要： A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.

摘要翻译： 带电粒子束曝光方法包括以下步骤：创建指示要曝光的图案的点阵图形数据，将点图案数据存储在具有第一存取速度的第一存储装置中，将点图案数据从第一存储装置传送到 第二存储装置具有第二较高访问速度，从第二存储装置读出点阵图形数据，并响应于通过消隐从第二存储装置读出的点图形数据产生多个带电粒子束 孔径阵列，其中消隐孔阵列包括多个孔，每个孔响应于点图案数据而导致与孔相关的改变的粒子束的导通和关断。

公开(公告)号：US5420433A

公开(公告)日：1995-05-30

申请号：US214415

申请日：1994-03-18

申请人： Yoshihisa Oae ,  Yasushi Takahashi ,  Hiroshi Yasuda

发明人： Yoshihisa Oae ,  Yasushi Takahashi ,  Hiroshi Yasuda

IPC分类号： H01L21/027 ,  G03F7/20 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01J37/3002 ,  H01J2237/022 ,  H01J2237/3175

摘要： A barrier electrode is formed above an article to be exposed so as to be opposite the surface of the article to be exposed. A voltage is applied to the barrier electrode so as to form a barrier electric field surrounding the optical axis of a charged particle beam and surrounding the article to be exposed.

摘要翻译： 阻挡电极形成在要暴露的物品的上方，以与要暴露的物品的表面相对。 向阻挡电极施加电压，以形成围绕带电粒子束的光轴并围绕待曝光的物品的阻挡电场。