A laser system and processing method exploits the absorption contrast between the materials from which a link (12) and an underlying substrate (22) are made to effectively remove the link from the substrate. Laser output in a wavelength range of 1.2 to 3 .mu.m (30) optimizes the absorption contrast between many materials (e.g., metals, polysilicon, polycides, or disilicides) and integrated circuit substrates (e.g., silicon, gallium arsenide, or other semiconductors) and permits the use of laser output in a wider range of energy or power levels, pulse widths, and spot sizes without risking damage to the substrates or adjacent circuit structures. Existing link processing laser systems can be readily modified to operate in the 1.2 to 3 .mu.m range.