发明授权
- 专利标题: Magnetoresistance effect element and magnetic recording apparatus
- 专利标题(中): 磁电阻效应元件和磁记录装置
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申请号: US209927申请日: 1994-03-14
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公开(公告)号: US5493465A公开(公告)日: 1996-02-20
- 发明人: Yuzo Kamiguchi , Susumu Hashimoto , Atsuhito Sawabe , Hitoshi Iwasaki , Masashi Sahashi
- 申请人: Yuzo Kamiguchi , Susumu Hashimoto , Atsuhito Sawabe , Hitoshi Iwasaki , Masashi Sahashi
- 申请人地址: JPX Kanagawa
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX5-053606 19930315
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; G11B5/39 ; H01L43/08
摘要:
A magnetoresistance effect element has a pair of ferromagnetic layers with a middle non-magnetic metallic layer interposed therebetween. The middle non-magnetic metallic layer has lamination structure of non-magnetic metallic thin films formed of at least two kinds of non-magnetic metallic materials. In the lamination structure of the non-magnetic metallic thin film, Fermi energies of the non-magnetic metallic thin films disposed on interface sides of the ferromagnetic layers has a value closer to a Fermi energy in a direction of spin whose electron spin dependent mean free path is long among Fermi energies of the ferromagnetic layers. A non-magnetic metallic thin film is disposed between such two non-magnetic metallic thin films. Difference in Fermi energy between non-magnetic metallic thin films made of two kinds of non-magnetic metallic materials is 0.5 eV or more. By the use of such a middle non-magnetic metallic layer, while the thickness thereof is as thin as possible, exchange coupling between ferromagnetic layers can be small. Thus, resistance change sensitivity can be enhanced.
公开/授权文献
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