发明授权
- 专利标题： MOS transistor threshold voltage generator
- 专利标题（中）： MOS晶体管阈值电压发生器
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申请号： US45465申请日： 1993-04-08
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公开(公告)号： US5495166A公开(公告)日： 1996-02-27
- 发明人: Roberto Alini , Andrea Baschirotto , Rinaldo Castello , Salvatore Portaluri
- 申请人： Roberto Alini , Andrea Baschirotto , Rinaldo Castello , Salvatore Portaluri
- 申请人地址： ITX Milano
- 专利权人： SGS-Thomson Microelectronics s.r.l.
- 当前专利权人： SGS-Thomson Microelectronics s.r.l.
- 当前专利权人地址： ITX Milano
- 优先权： EPX92830187 19920416
- 主分类号： H03F1/30
- IPC分类号： H03F1/30 ; G05F3/24 ; H03K17/14 ; G05F3/16
摘要：
A threshold voltage generator for a field-effect transistor, being of a type adapted to compensate for variations of the threshold voltage from a nominal value, comprising a first amplifier having a first input connected to a current generator; a second amplifier connected ahead of a second input of the first amplifier and having an input connected to another current generator; and a third amplifier connected after the first amplifier and having an output adapted to produce the value of said threshold voltage.
公开/授权文献
- US6005797A Latch-up prevention for memory cells 公开/授权日：1999-12-21
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