Invention Grant
- Patent Title: MOS transistor threshold voltage generator
- Patent Title (中): MOS晶体管阈值电压发生器
-
Application No.: US45465Application Date: 1993-04-08
-
Publication No.: US5495166APublication Date: 1996-02-27
- Inventor: Roberto Alini , Andrea Baschirotto , Rinaldo Castello , Salvatore Portaluri
- Applicant: Roberto Alini , Andrea Baschirotto , Rinaldo Castello , Salvatore Portaluri
- Applicant Address: ITX Milano
- Assignee: SGS-Thomson Microelectronics s.r.l.
- Current Assignee: SGS-Thomson Microelectronics s.r.l.
- Current Assignee Address: ITX Milano
- Priority: EPX92830187 19920416
- Main IPC: H03F1/30
- IPC: H03F1/30 ; G05F3/24 ; H03K17/14 ; G05F3/16
Abstract:
A threshold voltage generator for a field-effect transistor, being of a type adapted to compensate for variations of the threshold voltage from a nominal value, comprising a first amplifier having a first input connected to a current generator; a second amplifier connected ahead of a second input of the first amplifier and having an input connected to another current generator; and a third amplifier connected after the first amplifier and having an output adapted to produce the value of said threshold voltage.
Public/Granted literature
- US6005797A Latch-up prevention for memory cells Public/Granted day:1999-12-21
Information query
