发明授权
- 专利标题： Method of forming a thin film
- 专利标题（中）： 形成薄膜的方法
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申请号： US392737申请日： 1995-03-06
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公开(公告)号： US5514425A公开(公告)日： 1996-05-07
- 发明人: Hitoshi Ito , Kyoichi Suguro , Nobuo Hayasaka , Haruo Okano , Shinji Himori , Kazuya Nagaseki , Syuji Mochizuki
- 申请人： Hitoshi Ito , Kyoichi Suguro , Nobuo Hayasaka , Haruo Okano , Shinji Himori , Kazuya Nagaseki , Syuji Mochizuki
- 申请人地址： JPX Kawasaki JPX Tokyo JPX Nirasaki
- 专利权人： Kabushiki Kaisha Toshiba,Tokyo Electron Limited,Tokyo Electron Yamanashi Limited
- 当前专利权人： Kabushiki Kaisha Toshiba,Tokyo Electron Limited,Tokyo Electron Yamanashi Limited
- 当前专利权人地址： JPX Kawasaki JPX Tokyo JPX Nirasaki
- 优先权： JPX5-165644 19930705
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C16/04 ; C23C16/34 ; H01L21/302 ; H01L21/3065 ; H01L21/768 ; C23C14/02
摘要：
A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.
公开/授权文献
- US4978070A Pulsating sprinkler 公开/授权日：1990-12-18
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