发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US408965申请日： 1995-03-23
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公开(公告)号： US5550408A公开(公告)日： 1996-08-27
- 发明人: Yoshinobu Kunitomo , Makoto Nozu , Yasuyuki Sakashita , Masahide Tsukamoto , Seiichi Nakatani , Keiji Saeki , Yoshifumi Kitayama
- 申请人： Yoshinobu Kunitomo , Makoto Nozu , Yasuyuki Sakashita , Masahide Tsukamoto , Seiichi Nakatani , Keiji Saeki , Yoshifumi Kitayama
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electronics Corporation
- 当前专利权人： Matsushita Electronics Corporation
- 当前专利权人地址： JPX Osaka
- 优先权： JPX4-308589 19921118
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L21/60 ; H01L23/13 ; H01L23/29 ; H01L23/485 ; H01L23/28
摘要：
The top surface of an insulating substrate is formed with a plurality of electrodes for bump connection, while the undersurface of the insulating substrate is formed with external terminals which are arranged in a matrix. On the insulating substrate is provided a semiconductor chip. The undersurface of the semiconductor chip is formed with bump electrodes. The electrodes for bump connection are electrically connected to the bump electrodes by means of a conductive adhesive. The space between the semiconductor chip and the insulating substrate is filled with a resin which integrates the above two and dissipates heat generated from the semiconductor chip.
公开/授权文献
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