发明授权
- 专利标题: CVD reactor apparatus
- 专利标题(中): CVD反应器装置
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申请号: US263323申请日: 1994-06-21
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公开(公告)号: US5574247A公开(公告)日: 1996-11-12
- 发明人: Eisuke Nishitani , Susmu Tsuzuku , Natsuyo Chiba , Shigeru Kobayashi , Naoyuki Tamura , Norihiro Uchida
- 申请人: Eisuke Nishitani , Susmu Tsuzuku , Natsuyo Chiba , Shigeru Kobayashi , Naoyuki Tamura , Norihiro Uchida
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-149388 19930621; JPX6-106460 19940520
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; C23C16/02 ; C23C16/44 ; C23C16/455 ; C23C16/458 ; C23C16/48 ; C23C16/54 ; H01L21/205 ; H01L21/31 ; C23C16/00
摘要:
A CVD reactor apparatus includes a substrate clamp for clamping a peripheral edge of the front of a substrate disposed in a CVD reactor and, dividing a space in the reactor into a first space adjacent the front of the substrate and a second space adjacent the backside of the substrate. The apparatus also includes a unit for cooling the surface temperature of an inner wall of the reactor to a temperature equal to or less than a deposition lower limit, and a unit for supplying a CVD gas to the first space adjacent the substrate front and supplying an inert gas to the second space adjacent the substrate backside at different pressures and causing a reaction at only the substrate front, a reaction gas monitor and a substrate temperature monitor.
公开/授权文献
- US6000857A Double impact mounted ferrule for fiberoptic connector 公开/授权日:1999-12-14
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