发明授权
- 专利标题: Method of manufacturing solid state image sensing device
- 专利标题(中): 制造固体摄像装置的方法
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申请号: US455996申请日: 1995-05-31
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公开(公告)号: US5576239A公开(公告)日: 1996-11-19
- 发明人: Keisuke Hatano , Kazuma Minami
- 申请人: Keisuke Hatano , Kazuma Minami
- 申请人地址: JPX Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-119116 19940531
- 主分类号: H01L27/148
- IPC分类号: H01L27/148 ; H01L21/203 ; H01L31/0216 ; H01L21/70
摘要:
An aluminum film for covering an interlayer insulating film is formed by sputtering, and is then subjected to a heat treatment at a temperature lower than its melting point to cause a reflow. Then, an opening is formed in the aluminum film, so that a light shielding film is formed in such a way as to cover the step portion with a uniform thickness. Making the light shielding film of a solid state image sensing device thinner permits the opening size of the light shielding film to increase, ensures the effective use of light to improve the sensitivity, and improves the working precision in forming the opening, thus suppressing a variation in the sensitivity of the individual pixels.
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