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US5576239A Method of manufacturing solid state image sensing device 失效
制造固体摄像装置的方法

Method of manufacturing solid state image sensing device
摘要:
An aluminum film for covering an interlayer insulating film is formed by sputtering, and is then subjected to a heat treatment at a temperature lower than its melting point to cause a reflow. Then, an opening is formed in the aluminum film, so that a light shielding film is formed in such a way as to cover the step portion with a uniform thickness. Making the light shielding film of a solid state image sensing device thinner permits the opening size of the light shielding film to increase, ensures the effective use of light to improve the sensitivity, and improves the working precision in forming the opening, thus suppressing a variation in the sensitivity of the individual pixels.
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