公开(公告)号：US20130009263A1

公开(公告)日：2013-01-10

申请号：US13534309

申请日：2012-06-27

申请人： Keisuke Hatano ,  Atsushi Toda

发明人： Keisuke Hatano ,  Atsushi Toda

IPC分类号： H01L27/146

CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/1464

摘要： A solid-state imaging device includes a plurality of photoelectric conversion regions stacked at different depths within a semiconductor substrate of each pixel to photoelectrically convert light of different wavelength bands, and a discharge region formed between the photoelectric conversion regions adjacent to each other in a depth direction of the semiconductor substrate to discharge charges generated by photoelectric conversion in regions between the photoelectric conversion regions.

摘要翻译： 固态成像装置包括多个光电转换区域，该多个光电转换区域堆叠在每个像素的半导体衬底内的不同深度处，以对不同波长带的光进行光电转换，并且形成在彼此相邻的光电转换区域之间的放电区域 方向来放电在光电转换区域之间的区域中通过光电转换产生的电荷。

公开(公告)号：US07122902B2

公开(公告)日：2006-10-17

申请号：US10127266

申请日：2002-04-22

申请人： Keisuke Hatano ,  Takahisa Abiru

发明人： Keisuke Hatano ,  Takahisa Abiru

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L23/53238 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/05073 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/04953

摘要： A semiconductor device according to the present invention comprises a substrate; a copper interconnect layer formed on the top surface side of the substrate; an aluminum bonding pad formed on the top surface side of the copper interconnect layer with an aluminum-based material; and an aluminum interconnect formed on the top surface side of the copper interconnect layer with an aluminum-based material.

公开(公告)号：US06747355B2

公开(公告)日：2004-06-08

申请号：US10196430

申请日：2002-07-17

申请人： Takahisa Abiru ,  Keisuke Hatano

发明人： Takahisa Abiru ,  Keisuke Hatano

IPC分类号： H01L2348

CPC分类号： H01L24/03 ,  H01L23/5226 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/04953

摘要： A connection via hole is formed in an inter layer insulation film that covers a copper pad. Copper is formed within the connection via hole to form a connection copper via metal. An aluminum pad having a barrier metal thereunder for preventing reaction between copper and aluminum is formed on the connection copper via metal, thereby electrically connecting the copper pad and the aluminum pad to each other through the connection copper via metal. A step formed by the connection via hole that is formed in the inter layer insulation film is made substantially equal to zero with the aid of the connection copper via metal and at the same time, a film thickness of aluminum constituting the aluminum pad is reduced, thereby reducing manufacturing cost of the semiconductor device. Moreover, even when the connection copper via metal directly lying under the aluminum pad is oxidized, oxidation of the copper pad can be prevented, thereby advantageously preventing the breaking of copper interconnects connected to the copper pad and improving reliability of the semiconductor device.

摘要翻译： 在覆盖铜焊盘的层间绝缘膜中形成连接通孔。 在连接通孔内形成铜，以形成金属铜连接。 在金属连接铜上形成有用于防止铜和铝之间的反应的具有阻挡金属的铝焊盘，从而通过金属铜连接铜焊盘和铝焊盘彼此。 通过形成在层间绝缘膜中的连接通孔形成的台阶借助于铜通孔金属的连接基本上等于零，同时，减少了构成铝焊盘的铝的膜厚度， 从而降低半导体器件的制造成本。 此外，即使当直接位于铝焊盘下方的铜通孔金属的连接被氧化时，也可以防止铜焊盘的氧化，从而有利地防止连接到铜焊盘的铜互连的断裂并提高半导体器件的可靠性。

公开(公告)号：US06518605B1

公开(公告)日：2003-02-11

申请号：US09770188

申请日：2001-01-29

申请人： Keisuke Hatano ,  Masayuki Furumiya ,  Toru Kawasaki

发明人： Keisuke Hatano ,  Masayuki Furumiya ,  Toru Kawasaki

IPC分类号： H01L29768

CPC分类号： H01L27/14603 ,  H01L27/14692

摘要： A solid state imaging pickup device with a single-layer electrode structure which eliminates the release area at the terminal part of the charge transfer electrodes by surrounding the charge transfer electrodes with a dummy pattern, or with a pattern formed by connecting the charge transfer electrodes of a certain phase with each other at the outermost periphery. Surrounding the charge transfer electrode improves embedding performance when an insulating film is re-flowed for flattening inter-electrode gaps. This enables formation of a good metal wire or shielding film with no step-cut, thus improving the reliability of a solid state imaging pickup device.

摘要翻译： 一种具有单层电极结构的固态成像拾取装置，其通过用虚拟图案围绕电荷转移电极或通过连接电荷转移电极形成的图案来消除电荷转移电极的末端部分处的释放区域 在最外周彼此相邻。 围绕电荷转移电极，当绝缘膜被再流动以使平板化的电极间间隙时，可提高嵌入性能。 这样可以形成没有阶梯切割的良好的金属线或屏蔽膜，从而提高了固态成像拾取装置的可靠性。

公开(公告)号：US06452243B1

公开(公告)日：2002-09-17

申请号：US09467604

申请日：1999-12-20

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L3100

CPC分类号： H01L27/14689 ,  H01L27/14806

摘要： In a solid state image sensor, transfer electrodes are formed by selectively etch-removing a single layer of conducting electrode material at a plurality of first regions which divide the single layer of conducting electrode material in a row direction for each one pixel. A patterned mask is formed to cover the first regions and the single layer of conducting electrode material but to expose the single layer of conducting electrode material at a second region above each of the photoelectric conversion sections, and the single layer of conducting electrode material is selectively etch-removed using the patterned mask as a mask. Thereafter, a first conductivity type impurity and a second conductivity type impurity are ion-implanted using the patterned mask and the single layer of conducting electrode material as a mask, to form the photoelectric conversion section at the second region.

摘要翻译： 在固态图像传感器中，通过在多个第一区域选择性地蚀刻去除单层导电电极材料，形成传输电极，该多个第一区域将导电电极材料的单层沿行方向划分成每一个像素。 形成图案化掩模以覆盖第一区域和单层导电电极材料，但是在每个光电转换部分上方的第二区域处暴露单层导电电极材料，并且单层导电电极材料选择性地 使用图案化掩模作为掩模蚀刻去除。 此后，使用图案化掩模和单层导电电极材料作为掩模将第一导电类型杂质和第二导电类型杂质离子注入，以在第二区域形成光电转换部。

公开(公告)号：US6097433A

公开(公告)日：2000-08-01

申请号：US869442

申请日：1997-06-05

申请人： Shinichi Kawai ,  Michihiro Morimoto ,  Masayuki Furumiya ,  Chihiro Ogawa ,  Keisuke Hatano ,  Yasuaki Hokari ,  Takashi Sato ,  Nobuhiko Mutoh ,  Ichiro Murakami ,  Shinobu Suwazono ,  Hiroaki Utsumi ,  Kouichi Arai ,  Kozo Orihara ,  Nobukazu Teranishi ,  Takao Tamura

发明人： Shinichi Kawai ,  Michihiro Morimoto ,  Masayuki Furumiya ,  Chihiro Ogawa ,  Keisuke Hatano ,  Yasuaki Hokari ,  Takashi Sato ,  Nobuhiko Mutoh ,  Ichiro Murakami ,  Shinobu Suwazono ,  Hiroaki Utsumi ,  Kouichi Arai ,  Kozo Orihara ,  Nobukazu Teranishi ,  Takao Tamura

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/353 ,  H04N5/359 ,  H04N5/3722 ,  H04N5/3728 ,  H04N3/14

CPC分类号： H01L27/14812

摘要： Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

摘要翻译： 分流布线（12）以覆盖垂直CCD寄存器的导电遮光膜的形式，并且还用于供电，在垂直方向上投射到相邻的光电传感器（11）之间的位置，并且突出部分 相邻的金属配线设定为0.2μm以下，并且限制在相邻的金属布线之间的电场为107V / cm以下的相邻的金属配线的距离， 电路。

公开(公告)号：US5943556A

公开(公告)日：1999-08-24

申请号：US940114

申请日：1997-09-29

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L27/148 ,  H01L29/768

CPC分类号： H01L29/66954 ,  H01L27/14812 ,  H01L29/76841

摘要： In a method for manufacturing a charge transfer device, an N type semiconductor region is formed in a principal surface of a P type semiconductor substrate, to constitute a transfer channel of the charge transfer device. A silicon oxide film is formed to over a surface of the N type semiconductor region. Furthermore, a plurality of silicon nitride films are selectively formed on a surface of the silicon oxide film, separated from one another at predetermined intervals. Boron ions are ion-implanted into the N type semiconductor region, using as a mask the silicon nitride films and a photoresist formed to have an end partially overlapping each of the silicon nitride films, so that an N.sup.- type semiconductor regions, each of which constitutes an electric charge barrier region in the transfer channel, are selectively formed in the N type semiconductor region, in self alignment with the one end of each silicon nitride film, and on the other hand, the N type semiconductor region covered with the silicon nitride films and the photoresist, will constitute electric charge storage regions in the transfer channel. A plurality of conductive electrodes are formed each to cover the silicon oxide film between each pair of adjacent silicon nitride films, and the conductive electrodes are alternatively connected to a pair of wiring conductors.

摘要翻译： 在电荷转移装置的制造方法中，在P型半导体衬底的主表面上形成N型半导体区域，构成电荷转移装置的转移通道。 在N型半导体区域的表面上形成氧化硅膜。 此外，在氧化硅膜的表面上选择性地形成多个氮化硅膜，以预定间隔彼此分离。 硼离子被离子注入到N型半导体区域中，使用氮化硅膜和形成为使得每个氮化硅膜部分重叠的端部的光致抗蚀剂作为掩模，使得每个氮化硅膜的N型半导体区域 构成传输沟道中的电荷势垒区域，与氮化硅膜的一端自对准地在N型半导体区域选择性地形成，另一方面，覆盖有氮化硅的N型半导体区域 膜和光致抗蚀剂，将构成传输通道中的电荷存储区域。 形成多个导电电极以覆盖每对相邻的氮化硅膜之间的氧化硅膜，并且导电电极交替地连接到一对布线导体。

公开(公告)号：US5917208A

公开(公告)日：1999-06-29

申请号：US617368

申请日：1996-03-18

申请人： Keisuke Hatano

发明人： Keisuke Hatano

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L27/148 ,  H01L29/768

CPC分类号： H01L29/76833 ,  H01L27/14806

摘要： In a method of manufacturing a charge coupled device, a channel layer is formed on a surface of a semiconductor substrate. Then, first layer transfer electrodes are formed in a charge transfer direction above the channel layer via a first insulating film. Subsequently, second layer transfer electrodes are formed such that each of the second layer transfer electrodes is disposed between two of the first layer transfer electrodes without any portion overlapping the first layer transfer electrodes in a plane structure. The second layer transfer electrodes may be patterned after a polysilicon film is deposited and polished or may be polished after the polysilicon film is deposited and patterned.

摘要翻译： 在制造电荷耦合器件的方法中，在半导体衬底的表面上形成沟道层。 然后，第一层转移电极经由第一绝缘膜以电荷转移方向形成在沟道层上方。 随后，形成第二层转移电极，使得每个第二层转移电极设置在两个第一层转移电极之间，而没有任何部分与平面结构中的第一层转移电极重叠。 在沉积和抛光多晶硅膜之后，可以对第二层转移电极进行图案化，或者可以在多晶硅膜沉积和图案化之后进行抛光。

公开(公告)号：US5830778A

公开(公告)日：1998-11-03

申请号：US828337

申请日：1997-03-28

申请人： Keisuke Hatano ,  Yuji Surisawa ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yuji Surisawa ,  Yasutaka Nakashiba

IPC分类号： H01L29/762 ,  H01L21/266 ,  H01L21/339 ,  H01L21/00

CPC分类号： H01L29/66954

摘要： In a charge transfer device including single-layer charge transfer electrodes including a p-type polycrystalline silicon layer and an n-type polycrystalline silicon layer, the sizes of the charge accumulation and potential barrier regions can be set to desired values and the height of potential barrier is produced with a desired reproducibility. A polycrystalline silicon layer is fabricated on a surface of a semiconductor substrate. With a photoresist layer 106 as a mask, ions of phosphorus are implanted thereinto so as to form a silicon oxide layer by liquid phase growth. Boron ions are then injected thereinto. The junction region between the n-type and p-type polycrystalline silicon layers is etched for the separation of the charge transfer electrodes.

摘要翻译： 在包括p型多晶硅层和n型多晶硅层的单层电荷转移电极的电荷转移装置中，电荷累积和势垒区域的尺寸可以被设定为期望值和电位高度 以期望的再现性产生屏障。 在半导体衬底的表面上制造多晶硅层。 以光致抗蚀剂层106为掩模，注入磷离子，通过液相生长形成氧化硅层。 然后将硼离子注入其中。 蚀刻n型和p型多晶硅层之间的结区，以分离电荷转移电极。

公开(公告)号：US5504355A

公开(公告)日：1996-04-02

申请号：US320831

申请日：1994-10-07

申请人： Keisuke Hatano

发明人： Keisuke Hatano

IPC分类号： H01L27/14 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/10 ,  H01L27/148 ,  H01L23/58

CPC分类号： H01L31/02164

摘要： A solid state image sensor device having an effective light detecting element and a peripheral circuit includes a light-shielding film for shielding a periphery of the effective light detecting element, a first wiring film made of the same material as that of the light-shielding film and formed in the same process as that for the light-shielding film, and a second wiring film of aluminum for the peripheral circuit. The first wiring film and the second wiring film form a two layer wiring structure of the peripheral circuit and are electrically interconnected through contact holes in an interlayer insulating film. With this arrangement, it is possible to lower the wiring resistance for the peripheral circuit and also to cause a signal transfer clock pulse of high-frequency to propagate without its waveform becoming dull.

摘要翻译： 具有有效光检测元件和外围电路的固态图像传感器装置包括用于屏蔽有效光检测元件的周围的遮光膜，由与遮光膜相同的材料制成的第一布线膜 并且以与遮光膜相同的工艺形成，以及用于外围电路的铝的第二布线膜。 第一布线膜和第二布线膜形成外围电路的双层布线结构，并通过层间绝缘膜中的接触孔电互连。 通过这种布置，可以降低外围电路的布线电阻，并且还可以使高频的信号传输时钟脉冲传播而不会使波形变钝。