发明授权
- 专利标题： Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
- 专利标题（中）： 热失真补偿投影曝光方法及半导体制造装置
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申请号： US446511申请日： 1995-05-22
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公开(公告)号： US5581324A公开(公告)日： 1996-12-03
- 发明人: Tsuneo Miyai , Yuji Imai , Tetsuo Taniguchi , Kousuke Suzuki
- 申请人： Tsuneo Miyai , Yuji Imai , Tetsuo Taniguchi , Kousuke Suzuki
- 申请人地址： JPX Tokyo
- 专利权人： Nikon Corporation
- 当前专利权人： Nikon Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-138488 19930610; JPX5-166504 19930611; JPX5-174162 19930714; JPX5-217675 19930901
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03B27/42 ; G03B27/52
摘要：
A projection exposure apparatus has a light source for emitting illumination light, an illumination optical system for illuminating a mask, on which a predetermined pattern is formed, with the illumination light, and a projection optical system for forming an image of the pattern on a photosensitive substrate, and images the image of the pattern on the photosensitive substrate in a predetermined imaging state. The apparatus also includes a temperature measurement sensor for measuring a change in temperature of the mask, a control system for calculating the change amount of the imaging state caused by the change in temperature, and a correction system for correcting the change in imaging state.
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