发明授权
US5592669A File structure for a non-volatile block-erasable semiconductor flash memory 失效
用于非易失性块可擦除半导体闪存的文件结构

File structure for a non-volatile block-erasable semiconductor flash
memory
摘要:
A non-volatile semiconductor memory that is erasable only in blocks is described. Each bit of the non-volatile semiconductor memory cannot be overwritten from a first logical state to a second logical state without a prior erasure. Each bit of the non-volatile semiconductor memory can be overwritten from a second logical state to a first logical state without a prior erasure. The non-volatile semiconductor memory comprises an active block for storing a first file, a reserve block for storing a second file, and a directory block. The second file is a copy of the first file. The copy is made during a clean-up operation prior to erasure of the active block. The directory block comprises a directory entry for identifying the first file.
公开/授权文献
信息查询
0/0