发明授权
US5592669A File structure for a non-volatile block-erasable semiconductor flash
memory
失效
用于非易失性块可擦除半导体闪存的文件结构
- 专利标题: File structure for a non-volatile block-erasable semiconductor flash memory
- 专利标题(中): 用于非易失性块可擦除半导体闪存的文件结构
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申请号: US565929申请日: 1995-12-01
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公开(公告)号: US5592669A公开(公告)日: 1997-01-07
- 发明人: Kurt B. Robinson , Dale K. Elbert , Markus A. Levy
- 申请人: Kurt B. Robinson , Dale K. Elbert , Markus A. Levy
- 申请人地址: CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: CA Santa Clara
- 主分类号: G06F3/06
- IPC分类号: G06F3/06 ; G06F12/00 ; G06F12/02 ; G06F12/06 ; G11C16/02 ; G11C16/34 ; G06F17/30
摘要:
A non-volatile semiconductor memory that is erasable only in blocks is described. Each bit of the non-volatile semiconductor memory cannot be overwritten from a first logical state to a second logical state without a prior erasure. Each bit of the non-volatile semiconductor memory can be overwritten from a second logical state to a first logical state without a prior erasure. The non-volatile semiconductor memory comprises an active block for storing a first file, a reserve block for storing a second file, and a directory block. The second file is a copy of the first file. The copy is made during a clean-up operation prior to erasure of the active block. The directory block comprises a directory entry for identifying the first file.
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