发明授权
- 专利标题： High frequency magnetron plasma apparatus
- 专利标题（中）： 高频磁控管等离子设备
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申请号： US336631申请日： 1994-11-09
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公开(公告)号： US5605576A公开(公告)日： 1997-02-25
- 发明人: Makoto Sasaki , Hirofumi Fukui , Masami Aihara , Tadahiro Ohmi
- 申请人： Makoto Sasaki , Hirofumi Fukui , Masami Aihara , Tadahiro Ohmi
- 申请人地址： JPX Sendai JPX Sendai
- 专利权人： Frontec Incorporated,Ohmi; Tadahiro
- 当前专利权人： Frontec Incorporated,Ohmi; Tadahiro
- 当前专利权人地址： JPX Sendai JPX Sendai
- 优先权： JPX5-282723 19931111
- 主分类号： H05H1/46
- IPC分类号： H05H1/46 ; C23C14/35 ; C23C14/40 ; C23C16/50 ; C23C16/509 ; C23F4/00 ; H01J37/34 ; H01L21/203 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; C23C16/00
摘要：
An object of the present invention is to increase the energy efficiency of a plasma apparatus and provide a high-frequency magnetron plasma apparatus which can precisely control plasma. The plasma apparatus has a susceptor electrode, a plasma exciting electrode, magnets mounted on the plasma exciting electrode, and a magnetic shield provided around the plasma exciting electrode, all of which are arranged in a vacuum chamber. The magnetic shield has a high impedance for a high frequency. The magnetic shield is preferably earthed with a direct current, more preferably earthed through an inductance.
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