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    Film manufacturing method using single reaction chamber for chemical-vapor deposition and sputtering
    6.
    发明授权
    Film manufacturing method using single reaction chamber for chemical-vapor deposition and sputtering 失效
    使用单反应室进行化学气相沉积和溅射的膜制造方法

    公开(公告)号：US5609737A

    公开(公告)日：1997-03-11

    申请号：US289713

    申请日：1994-08-12

    申请人： Hirofumi Fukui ,  Masanori Miyazaki ,  Masami Aihara ,  Chisato Iwasaki ,  Koichi Fukuda ,  Yasuhiko Kasama

    发明人： Hirofumi Fukui ,  Masanori Miyazaki ,  Masami Aihara ,  Chisato Iwasaki ,  Koichi Fukuda ,  Yasuhiko Kasama

    IPC分类号： H01L21/205 ,  C23C14/34 ,  C23C16/02 ,  C23C16/44 ,  C23C16/509 ,  H01L21/203 ,  H01L21/31 ,  H01L21/336 ,  H01L21/77 ,  H01L31/20 ,  C23C16/00

    CPC分类号： H01L29/66765 ,  C23C14/34 ,  C23C16/0245 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/34 ,  H01L31/202 ,  H01J2237/32 ,  H01L27/1214 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method for manufacturing thin films in which a first film is formed on a substrate using chemical-vapor deposition (CVD), and a second film is formed on the substrate using sputtering, wherein the processes are sequentially performed in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode, and a second electrode located under the first electrode. During the CVD process, a dummy target is mounted on the first electrode and the substrate is mounted on the second electrode, a reactive gas is introduced into the chamber, and high frequency electrical power is applied to both the first and second electrodes, thereby causing the constituents of the reactive gas to deposit on the substrate to form the first film. Subsequently, any remaining reactive gas is removed from the chamber and an automated mechanism removes the dummy target from the first electrode and stores the dummy target in a storage chamber. A sputtering electrode is then mounted on the first electrode and a sputtering gas is introduced into the reaction chamber. High frequency electrical power is then applied to both the first and second electrodes, thereby causing the sputtering gas and sputtering target to deposit the second film on the substrate.

    摘要翻译： 一种用于制造薄膜的方法，其中使用化学气相沉积（CVD）在基板上形成第一膜，并且使用溅射在所述基板上形成第二膜，其中所述工艺在相同的沉积室中依次进行而不暴露 底物转化为氧化性气氛。 沉积室包括第一电极和位于第一电极下方的第二电极。 在CVD工艺期间，将虚拟目标物安装在第一电极上，并且将基板安装在第二电极上，将反应性气体引入室中，并且将高频电力施加到第一和第二电极两者，由此引起 反应气体的成分沉积在基底上以形成第一膜。 随后，将任何剩余的反应气体从室中除去，并且自动化机构从第一电极移除虚设目标物并将虚拟目标物存储在储存室中。 然后将溅射电极安装在第一电极上，并将溅射气体引入反应室。 然后将高频电力施加到第一和第二电极，由此使溅射气体和溅射靶将第二膜沉积在基板上。

    Single chamber for CVD and sputtering film manufacturing
    7.
    发明授权
    Single chamber for CVD and sputtering film manufacturing 失效
    用于CVD和溅射膜制造的单室

    公开(公告)号：US5755938A

    公开(公告)日：1998-05-26

    申请号：US556188

    申请日：1995-11-09

    申请人： Hirofumi Fukui ,  Masanori Miyazaki ,  Masami Aihara ,  Chisato Iwasaki ,  Koichi Fukuda ,  Yasuhiko Kasama

    发明人： Hirofumi Fukui ,  Masanori Miyazaki ,  Masami Aihara ,  Chisato Iwasaki ,  Koichi Fukuda ,  Yasuhiko Kasama

    IPC分类号： H01L21/205 ,  C23C14/34 ,  C23C16/02 ,  C23C16/44 ,  C23C16/509 ,  H01L21/203 ,  H01L21/31 ,  H01L21/336 ,  H01L21/77 ,  H01L31/20 ,  C23C16/00

    CPC分类号： H01L29/66765 ,  C23C14/34 ,  C23C16/0245 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/34 ,  H01L31/202 ,  H01J2237/32 ,  H01L27/1214 ,  Y02E10/50 ,  Y02P70/521

    摘要： An apparatus which allows a first film to be formed on a substrate by chemical vapor deposition (CVD) and a second film to be formed on the substrate by sputtering, wherein the processes are performed sequentially in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode and a second electrode located under the first electrode. A transfer mechanism loads a dummy target onto the first electrode and the substrate onto the second electrode prior to a CVD process. The dummy target is resistant to sputtering and thus does not contaminate the film deposited on the substrate during CVD. After CVD and prior to sputtering, the transfer mechanism unloads the dummy target and replaces it with a sputtering target for film formation by sputtering. Both the dummy target and sputtering target can be loaded and unloaded from a single pressurized storage chamber. Thus, film formation by both sputtering and CVD can be accomplished by using a single deposition chamber without removing the substrate between processes.

    摘要翻译： 一种允许通过化学气相沉积（CVD）在衬底上形成第一膜和通过溅射形成在衬底上的第二膜的装置，其中在相同的沉积室中顺序地进行处理，而不将衬底暴露于 氧化气氛。 沉积室包括位于第一电极下方的第一电极和第二电极。 转移机构在CVD工艺之前将虚拟靶加载到第二电极上的第一电极和衬底上。 虚拟靶对溅射是耐受的，因此在CVD期间不会污染沉积在衬底上的膜。 在CVD之后并且在溅射之前，转移机构卸载虚拟靶并用用溅射的成膜溅射靶代替它。 虚拟靶和溅射靶都可以从单个加压储存室装载和卸载。 因此，通过溅射和CVD的成膜可以通过使用单个沉积室而不在工艺之间移除基板来实现。

    Temperature-compensating thin-film capacitor and electronic device
    8.
    发明授权
    Temperature-compensating thin-film capacitor and electronic device 失效

    公开(公告)号：US06556421B2

    公开(公告)日：2003-04-29

    申请号：US10028543

    申请日：2001-12-19

    申请人： Masahiro Aoki ,  Makoto Sasaki ,  Hitoshi Kitagawa ,  Hirofumi Fukui

    发明人： Masahiro Aoki ,  Makoto Sasaki ,  Hitoshi Kitagawa ,  Hirofumi Fukui

    IPC分类号： H01G406

    CPC分类号： H01G4/18

    摘要： A temperature-compensating thin-film capacitor includes a first dielectric thin-film having a specific inductive capacity of 4.0 or less and a linear thermal expansion coefficient of 50 ppm/° C. or more, and includes a second thin-film capacitor having capacitance-temperature coefficient with an absolute value of 50 ppm/° C. or less, in which the first and the second dielectric thin-films are placed between electrodes. The present thin-film capacitor design significantly reduces variations in capacitance due to manufacturing equipment tolerance. Also, miniaturization, thinning, and lightening of the thin-film capacitor is achieved. In another aspect of the invention, an electronic device having the temperature-compensating thin-film is provided. The temperature stability of the present thin-film capacitor is highly advantageous for incorporation into electronic devices such as a portable electronic device, microwave communication equipment.