发明授权
- 专利标题： Method for forming a multi-layer planarization structure
- 专利标题（中）： 形成多层平坦化结构的方法
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申请号： US376736申请日： 1995-01-23
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公开(公告)号： US5629245A公开(公告)日： 1997-05-13
- 发明人: Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
- 申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX61-213323 19860909; JPX61-213324 19860909; JPX61-213325 19860909; JPX61-141050 19870506
- 主分类号： C23C16/02
- IPC分类号： C23C16/02 ; C23C16/40 ; C23C16/44 ; C23C16/48 ; C23C16/517 ; C23C16/56 ; H01L21/316 ; H01L21/20
摘要：
An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
公开/授权文献
- US4958748A Adhesive container/feeder 公开/授权日：1990-09-25
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