发明授权
- 专利标题： Semiconductor memory device reducing hydrogen content
- 专利标题（中）： 半导体存储器件具有降低的氢含量
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申请号： US492690申请日： 1995-06-20
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公开(公告)号： US5644158A公开(公告)日： 1997-07-01
- 发明人: Eiji Fujii , Atsuo Inoue , Koji Arita , Toru Nasu , Akihiro Matsuda
- 申请人： Eiji Fujii , Atsuo Inoue , Koji Arita , Toru Nasu , Akihiro Matsuda
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electronics Corporation
- 当前专利权人： Matsushita Electronics Corporation
- 当前专利权人地址： JPX Osaka
- 优先权： JPX6-138689 19940621
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/3105 ; H01L21/324 ; H01L21/768 ; H01L21/822 ; H01L27/10 ; H01L21/3205
摘要：
A semiconductor device comprising: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer formed on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element formed on the first insulating layer, (d) a second insulating layer formed on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.
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