Invention Grant
- Patent Title: Method of forming a dielectric layer
- Patent Title (中): 形成电介质层的方法
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Application No.: US296931Application Date: 1994-08-31
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Publication No.: US5656337APublication Date: 1997-08-12
- Inventor: In-Seon Park , Myoung-Bum Lee , Chang-Gee Hong , Chang-Gyu Kim , U-In Chung
- Applicant: In-Seon Park , Myoung-Bum Lee , Chang-Gee Hong , Chang-Gyu Kim , U-In Chung
- Applicant Address: KRX Suwon
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KRX Suwon
- Priority: KRX93-17552 19930831
- Main IPC: H01L21/205
- IPC: H01L21/205 ; C23C16/02 ; C23C16/40 ; C23C16/44 ; H01L21/31 ; H01L21/3105 ; H01L21/316 ; H01L21/3205 ; H05H1/00
Abstract:
A deposition rate of a dielectric material is varied with the electrical polarity of an underlying layer to obtain excellent deposition and planarization characteristics. A conductive layer and the underlying dielectric are surface-treated to have different electrical polarities so that the dielectric is formed by using the difference of deposition rates of the dielectric material between that on the conductive layer and that on the underlying dielectric. A CVD apparatus having a DC power source connected between a susceptor and a gas injection portion thereof is provided. The deposition and planarization can be performed at low temperatures and are simplified in process.
Public/Granted literature
- US4521848A Intersystem fault detection and bus cycle completion logic system Public/Granted day:1985-06-04
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