公开(公告)号：US5656337A

公开(公告)日：1997-08-12

申请号：US296931

申请日：1994-08-31

申请人： In-Seon Park ,  Myoung-Bum Lee ,  Chang-Gee Hong ,  Chang-Gyu Kim ,  U-In Chung

发明人： In-Seon Park ,  Myoung-Bum Lee ,  Chang-Gee Hong ,  Chang-Gyu Kim ,  U-In Chung

IPC分类号： H01L21/205 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H05H1/00

CPC分类号： H01L21/02164 ,  C23C16/0245 ,  C23C16/402 ,  C23C16/44 ,  H01L21/02271 ,  H01L21/02315 ,  H01L21/31051 ,  H01L21/31608

摘要： A deposition rate of a dielectric material is varied with the electrical polarity of an underlying layer to obtain excellent deposition and planarization characteristics. A conductive layer and the underlying dielectric are surface-treated to have different electrical polarities so that the dielectric is formed by using the difference of deposition rates of the dielectric material between that on the conductive layer and that on the underlying dielectric. A CVD apparatus having a DC power source connected between a susceptor and a gas injection portion thereof is provided. The deposition and planarization can be performed at low temperatures and are simplified in process.

摘要翻译： 介电材料的沉积速率随着下层的电极性而变化，以获得优异的沉积和平坦化特性。 导电层和下面的电介质被表面处理以具有不同的电极性，使得通过使用电介质材料在导电层上和在下面的电介质之间的沉积速率的差异来形成电介质。 提供了一种具有连接在基座和其气体注入部分之间的直流电源的CVD装置。 沉积和平坦化可以在低温下进行并且在工艺上被简化。

公开(公告)号：US5560778A

公开(公告)日：1996-10-01

申请号：US465015

申请日：1995-06-05

申请人： In-Seon Park ,  Myoung-Bum Lee ,  Chang-Gee Hong ,  Chang-Gyu Kim ,  U-In Chung

发明人： In-Seon Park ,  Myoung-Bum Lee ,  Chang-Gee Hong ,  Chang-Gyu Kim ,  U-In Chung

IPC分类号： H01L21/205 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  C23C16/00

CPC分类号： H01L21/02164 ,  C23C16/0245 ,  C23C16/402 ,  C23C16/44 ,  H01L21/02271 ,  H01L21/02315 ,  H01L21/31051 ,  H01L21/31608

摘要： A deposition rate of a dielectric material is varied with the electrical polarity of an underlying layer to obtain excellent deposition and planarization characteristics. A conductive layer and the underlying dielectric are surface-treated to have different electrical polarities so that the dielectric is formed by using the difference of deposition rates of the dielectric material between that on the conductive layer and that on the underlying dielectric. A CVD apparatus having a DC power source connected between a susceptor and a gas injection portion thereof is provided. The deposition and planarization can be performed at low temperatures and are simplified in process.

摘要翻译： 介电材料的沉积速率随着下层的电极性而变化，以获得优异的沉积和平坦化特性。 导电层和下面的电介质被表面处理以具有不同的电极性，使得通过使用电介质材料在导电层上和在下面的电介质之间的沉积速率的差异来形成电介质。 提供了一种具有连接在基座和其气体注入部分之间的直流电源的CVD装置。 沉积和平坦化可以在低温下进行并且在工艺上被简化。