发明授权
- 专利标题: Semiconductor light-emitting device
- 专利标题(中): 半导体发光装置
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申请号: US508966申请日: 1995-07-28
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公开(公告)号: US5657336A公开(公告)日: 1997-08-12
- 发明人: Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
- 申请人: Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
- 申请人地址: JPX Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-178773 19940729; JPX7-017327 19950203
- 主分类号: H01L33/14
- IPC分类号: H01L33/14 ; H01L33/28 ; H01S5/00 ; H01S5/028 ; H01S5/30 ; H01S5/327 ; H01S3/19
摘要:
A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.
公开/授权文献
- US5134778A Design-making instrument 公开/授权日:1992-08-04