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    Method of fabricating of light emitting device with controlled lattice mismatch
    3.
    发明授权
    Method of fabricating of light emitting device with controlled lattice mismatch 失效
    具有受控晶格失配的发光器件的制造方法

    公开(公告)号：US5872023A

    公开(公告)日：1999-02-16

    申请号：US829214

    申请日：1997-03-31

    申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

    CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

    摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

    摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成 作为S，Se，Te。 第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

    Semiconductor light emitting device with lattice-matching and lattice-mismatching
    4.
    发明授权
    Semiconductor light emitting device with lattice-matching and lattice-mismatching 失效
    具有晶格匹配和晶格失配的半导体发光器件

    公开(公告)号：US5633514A

    公开(公告)日：1997-05-27

    申请号：US570376

    申请日：1995-12-11

    申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327

    CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

    摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

    摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成， 作为S，Se，Te。 在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

    Semiconductor laser
    5.
    再颁专利
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：USRE37177E1

    公开(公告)日：2001-05-15

    申请号：US09260865

    申请日：1999-03-01

    申请人： Masakazu Ukita ,  Akira Ishibashi

    发明人： Masakazu Ukita ,  Akira Ishibashi

    IPC分类号： H01S532

    CPC分类号： B82Y20/00 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/028 ,  H01S5/0421 ,  H01S5/06209 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347

    摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(Q) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature T0(K). When two amounts &agr; and &bgr; are defined by: &agr;≡(Rt/T0)Ithvth &bgr;≡(Rt/T0)RSTth2 the point (&agr;,&bgr;) exists in an area on the &agr;-&bgr; plane surrounded by the straight line &agr;=0, the straight line &bgr;=0, and the curve ((2ln t−1)/t, (1−ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

    摘要翻译： 半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。 第一包层，有源层和第二包层由II-VI化合物半导体制成。 脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（Q） 上升之后，具有热阻Rt（K / W）和特征温度T0（K）。 当α和β两个定义为：α（β，β）点存在于由直线α= 0包围的α-β平面上的区域，直线β= 0，曲线（（21n t -1）/ t，（1-ln t）/ t2）。 半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。 制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。 提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

    Semiconductor laser
    6.
    再颁专利
    Semiconductor laser 有权

    公开(公告)号：USRE38339E1

    公开(公告)日：2003-12-02

    申请号：US09590647

    申请日：2000-06-08

    申请人： Masakazu Ukita ,  Akira Ishibashi

    发明人： Masakazu Ukita ,  Akira Ishibashi

    IPC分类号： H01S532

    CPC分类号： B82Y20/00 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/028 ,  H01S5/0421 ,  H01S5/06209 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347

    摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(&OHgr;) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature To(K). When two amounts &agr; and &bgr; are defined by: &agr;≡(Rt/To)IthVth &bgr;≡(Rt/To)RSIth2 the point (&agr;,&bgr;) exists in an area on the &agr;-&bgr; plane surrounded by the straight line &agr;=0, the straight line &bgr;=0, and the curve ((21n t−1)/t, (1−ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

    Semiconductor laser
    7.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5625634A

    公开(公告)日：1997-04-29

    申请号：US275374

    申请日：1994-07-15

    申请人： Masakazu Ukita ,  Akira Ishibashi

    发明人： Masakazu Ukita ,  Akira Ishibashi

    IPC分类号： H01S5/00 ,  H01S5/024 ,  H01S5/028 ,  H01S5/042 ,  H01S5/062 ,  H01S5/323 ,  H01S5/327 ,  H01S5/343 ,  H01S5/347 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/024 ,  H01S5/06209 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0421

    摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (Q) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by:.alpha..ident.(R.sub.t /T.sub.0)I.sub.th v.sub.th.beta..ident.(R.sub.t /T.sub.0)R.sub.S I.sub.th.sup.2the point (.alpha., .beta.) exists in an area on the .alpha.-.beta. plane surrounded by the straight line .alpha.=0, the straight line .beta.=0, and the curve ((2ln t-1)/t, (1-ln t)/t.sup.2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

    摘要翻译： 半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。 第一包层，有源层和第二包层由II-VI化合物半导体制成。 脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（Q） 上升之后，具有热阻Rt（K / W）和特征温度T0（K）。 当α和β的两个量定义为：α=（Rt / T0）Ithvth beta =（Rt / T0）RSIth2点（α，β）存在于由直线α= 0，直线β= 0以及具有t作为参数的曲线（（2ln t-1）/ t，（1-ln t）/ t2）。 半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。 制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。 提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

    Semiconductor laser
    8.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5764672A

    公开(公告)日：1998-06-09

    申请号：US829064

    申请日：1997-03-31

    申请人： Masakazu Ukita ,  Akira Ishibashi

    发明人： Masakazu Ukita ,  Akira Ishibashi

    IPC分类号： H01S5/00 ,  H01S5/024 ,  H01S5/028 ,  H01S5/042 ,  H01S5/062 ,  H01S5/323 ,  H01S5/327 ,  H01S5/343 ,  H01S5/347 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/024 ,  H01S5/06209 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0421

    摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (.OMEGA.) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by: .alpha..ident.(R.sub.t /T.sub.0)I.sub.th V.sub.th .beta..ident.(R.sub.t /T.sub.0)R.sub.S I.sub.th.sup.2 the point (.alpha., .beta.) exists in an area on the .alpha.-.beta. plane surrounded by the straight line .alpha.=0, the straight line .beta.=0, and the curve ((21n t-1)/t, (1-ln t)/t.sup.2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

    摘要翻译： 半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。 第一包层，有源层和第二包层由II-VI化合物半导体制成。 脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（OMEGA） 上升之后，具有热阻Rt（K / W）和特征温度T0（K）。 当α和β的两个量定义为：α=（Rt / T0）IthVthβ=（Rt / T0）RSIth2点（α，β）存在于由直线α= 0包围的α-β平面上的区域 ，直线β= 0以及具有t作为参数的曲线（（21n t-1）/ t，（1-ln t）/ t2）。 半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。 制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。 提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。