发明授权
- 专利标题: Electric circuit and method for forming the same
- 专利标题(中): 电路及其形成方法
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申请号: US460426申请日: 1995-07-19
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公开(公告)号: US5677559A公开(公告)日: 1997-10-14
- 发明人: Hongyong Zhang , Hideki Uochi , Hiroki Adachi , Itaru Koyama , Shunpei Yamazaki
- 申请人: Hongyong Zhang , Hideki Uochi , Hiroki Adachi , Itaru Koyama , Shunpei Yamazaki
- 申请人地址: JPX Kanagawa
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX4-143319 19920509; JPX4-282352 19920928; JPX4-360192 19921228
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/8234 ; H01L21/84 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113
摘要:
An improved method of forming insulated gate field effect transistors is described. In accordance with the method, gate electrodes are formed from metal such as aluminum together with wirings electrically connecting the gate electrodes. The gate electrodes are anodic oxidized by dipping them as an anode in an electrolyte to form an oxide of the metal covering them. Since the connecting wirings are covered with a suitable organic film before the anodizing, no aluminum oxide is formed thereon so that it is easy to remove the connecting wiring by usual etching.
公开/授权文献
- US4448907A Process for casting lightweight metals 公开/授权日:1984-05-15