发明授权
- 专利标题: Flash EEPROM worldline decoder
- 专利标题(中): 闪存EEPROM世界解码器
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申请号: US645630申请日: 1996-05-14
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公开(公告)号: US5687121A公开(公告)日: 1997-11-11
- 发明人: Peter W. Lee , Hsing-Ya Tsao , Fu-Chang Hsu
- 申请人: Peter W. Lee , Hsing-Ya Tsao , Fu-Chang Hsu
- 申请人地址: CA Saratoga
- 专利权人: Aplus Integrated Circuits, Inc.
- 当前专利权人: Aplus Integrated Circuits, Inc.
- 当前专利权人地址: CA Saratoga
- 主分类号: G11C8/10
- IPC分类号: G11C8/10 ; G11C11/56 ; G11C16/08 ; G11C16/10 ; G11C16/16 ; G11C16/34 ; G11C16/00
摘要:
A flash memory wordline decoder includes a plurality of voltage terminals to receive a plurality of voltages, a plurality of address terminals to receive a plurality of address signals, a procedure terminal to receive a procedure signal, and a plurality of output wordlines adapted to be coupled to a bank of flash transistors. The wordline decoder circuit is configured to decode the address signals and includes latches coupled to the wordlines, where the latches are configured to latch the wordlines and to provide an operational voltage on the wordline to accomplish a predetermined operation responsive to the procedure signal. Advantages of the invention include a verification with a low verification voltage such as 1 V or less for operating with a VDD supply voltage as low as 1.5 V. The decoder also reduces erase/write cycle time and improves expected lifetime of the flash memory due to reduced stress on the flash transistors within the flash memory.
公开/授权文献
- US5128588A Discharge lamp with molybdenum sealing foils 公开/授权日:1992-07-07
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