发明授权
- 专利标题： Plasma processing apparatus
- 专利标题（中）： 等离子体处理装置
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申请号： US340472申请日： 1994-11-14
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公开(公告)号： US5728278A公开(公告)日： 1998-03-17
- 发明人: Nobuyuki Okamura , Atsushi Yamagami , Tadahiro Ohmi , Haruhiro Harry Goto , Tadashi Shibata
- 申请人： Nobuyuki Okamura , Atsushi Yamagami , Tadahiro Ohmi , Haruhiro Harry Goto , Tadashi Shibata
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha/Applied Materials Japan Inc.
- 当前专利权人： Canon Kabushiki Kaisha/Applied Materials Japan Inc.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-326075 19901129
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; C23C14/00 ; C23C14/35 ; C23C14/56 ; C23C16/509 ; H01J37/34 ; H01L21/203
摘要：
A plasma processing apparatus has a vacuum container which contains a pair of electrodes for causing a discharge for generating a plasma, and a shielding plate for separating a plasma processing region including a space between the electrodes from a region in contact with the inner wall of the vacuum container in such a manner that both the regions communicate with each other. The apparatus includes a means for causing a pressure difference between the plasma processing region and the region in contact with the inner wall of the vacuum container.
公开/授权文献
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