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    Plasma CVD process using a very-high-frequency and plasma CVD apparatus
    3.
    发明授权
    Plasma CVD process using a very-high-frequency and plasma CVD apparatus 失效
    使用非常高频和等离子体CVD装置的等离子体CVD工艺

    公开(公告)号：US5534070A

    公开(公告)日：1996-07-09

    申请号：US343560

    申请日：1994-11-30

    申请人： Nobuyuki Okamura ,  Atsushi Yamagami ,  Satoshi Takaki

    发明人： Nobuyuki Okamura ,  Atsushi Yamagami ,  Satoshi Takaki

    IPC分类号： C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00 ,  H05H1/20

    CPC分类号： H01J37/321 ,  C23C16/509 ,  H01J37/32532

    摘要： A plasma CVD process comprises conducting film formation in a reaction chamber capable of being substantially vacuumed in which a plurality of cylindrical substrates are spacedly arranged on a concentric circle in said reaction chamber such that a desired discharge space is formed at the central position of the inside of said reaction chamber and a cathode electrode is disposed at the central position of said discharge space, by introducing a film-forming gas into said discharge space and applying a high frequency power from a high frequency power source to said cathode electrode to produce plasma between said plurality of cylindrical substrates and said cathode electrode, whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates, characterized in that an earth shield comprising a non-magnetic material and a soft magnetic material or an insulating material being stacked is disposed at each of the opposite end portions of said cathode electrode, and a very-high-frequency energy of a frequency range of 60 MHz or more from said high frequency power source is applied to said cathode electrode to produce plasma in said reaction chamber whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates. And a VHF plasma CVD apparatus suitable for practicing the plasma CVD process.

    摘要翻译： PCT No.PCT / JP94 / 00537 371日期1994年11月30日 102（e）1994年11月30日PCT PCT日期为1994年3月31日。等离子体CVD工艺包括在能够基本上被抽真空的反应室中进行成膜，其中多个圆柱形基板间隔布置在同心圆上 所述反应室使得在所述反应室的内部的中心位置处形成期望的放电空间，并且在所述放电空间的中心位置处设置阴极，通过将成膜气体引入所述放电空间并施加 从高频电源到所述阴极电极的高频电力，以在所述多个圆柱形基板和所述阴极之间产生等离子体，由此在所述多个圆柱形基板中的每一个的表面上形成沉积膜，其特征在于， 包括非磁性材料和软磁性材料或层叠的绝缘材料的屏蔽设置在每一个上 e所述阴极电极的相对端部分，并且将所述高频电源的频率范围为60MHz或更高的非常高频能量施加到所述阴极以在所述反应室中产生等离子体，由此形成沉积膜 在所述多个圆柱形基底中的每一个的表面上。 以及适用于实施等离子体CVD工艺的VHF等离子体CVD装置。

    Plasma CVD process using a very-high-frequency and plasma CVD apparatus
    5.
    发明授权
    Plasma CVD process using a very-high-frequency and plasma CVD apparatus 失效
    使用非常高频和等离子体CVD装置的等离子体CVD工艺

    公开(公告)号：US5540781A

    公开(公告)日：1996-07-30

    申请号：US338617

    申请日：1994-11-23

    申请人： Atsushi Yamagami ,  Nobuyuki Okamura ,  Satoshi Takaki

    发明人： Atsushi Yamagami ,  Nobuyuki Okamura ,  Satoshi Takaki

    IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  C23C16/00 ,  H05H1/20

    CPC分类号： H01J37/32082 ,  C23C16/5093 ,  H01J37/32541 ,  H05H1/46

    摘要： A VHF plasma CVD process in which a cathode electrode is electrically divided into a plurality of elements in the axial direction of a cylindrical substrate, and a very-high-frequency energy with a frequency in the range of 60 MHz to 300 MHz is supplied to each of the divided cathode electrode elements by way of a high frequency power supply means for generating a plasma in a reaction chamber thereby forming a deposited film; and a VHF plasma CVD apparatus suitable for carrying out the VHF plasma process.

    摘要翻译： PCT No.PCT / JP94 / 00462 Sec。 371日期1994年11月23日 102（e）日期1994年11月23日PCT 1994年3月23日提交了一种VHF等离子体CVD法，其中阴极电极在圆筒形基板的轴向电分成多个元件，并且具有非常高的频率 通过用于在反应室中产生等离子体从而形成沉积膜的高频电源装置向每个分割的阴极电极元件提供频率在60MHz至300MHz的范围内的能量; 以及适用于进行VHF等离子体处理的VHF等离子体CVD装置。

    Plasma processing method
    6.
    发明授权
    Plasma processing method 有权
    等离子体处理方法

    公开(公告)号：US06291029B1

    公开(公告)日：2001-09-18

    申请号：US09368497

    申请日：1999-08-05

    申请人： Satoshi Takaki ,  Atsushi Yamagami ,  Nobuyuki Okamura

    发明人： Satoshi Takaki ,  Atsushi Yamagami ,  Nobuyuki Okamura

    IPC分类号： C23C1600

    CPC分类号： H01J37/32082 ,  C23C16/24 ,  C23C16/509

    摘要： To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.

    摘要翻译： 为了提高具有相对较大面积的基板的等离子体处理的加工速度和均匀性，等离子体处理装置包括反应容器，该反应容器具有由电介质部件构成的部分，其容纳成膜基板，并且能够被抽真空 排气装置和用于将预定气体供应到反应容器中的气体供给装置，设置在反应容器外侧位置处的阴极，阴极电极经由电介质构件与容纳在反应容器中的成膜​​基板相对，并且 用于将30MHz至300MHz的高频功率提供给阴极的高频电源装置（匹配电路和高频电源）。 将30MHz至300MHz的高频功率提供给阴极，以在电介质构件和成膜衬底之间产生等离子体。

    Plasma processing apparatus
    7.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US5970907A

    公开(公告)日：1999-10-26

    申请号：US791460

    申请日：1997-01-27

    申请人： Satoshi Takai ,  Atsushi Yamagami ,  Nobuyuki Okamura

    发明人： Satoshi Takai ,  Atsushi Yamagami ,  Nobuyuki Okamura

    IPC分类号： C23C16/24 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

    CPC分类号： H01J37/32082 ,  C23C16/24 ,  C23C16/509

    摘要： To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.

    摘要翻译： 为了提高具有相对较大面积的基板的等离子体处理的加工速度和均匀性，等离子体处理装置包括反应容器，该反应容器具有由电介质部件构成的部分，其容纳成膜基板，并且能够被抽真空 排气装置和用于将预定气体供应到反应容器中的气体供给装置，设置在反应容器外侧位置处的阴极，阴极电极经由电介质构件与容纳在反应容器中的成膜​​基板相对，并且 用于将30MHz至300MHz的高频功率提供给阴极的高频电源装置（匹配电路和高频电源）。 将30MHz至300MHz的高频功率提供给阴极，以在电介质构件和成膜衬底之间产生等离子体。

    Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature
    8.
    发明授权
    Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature 失效
    在相对低的基板温度下通过偏压溅射法形成功能沉积膜的方法

    公开(公告)号：US5510011A

    公开(公告)日：1996-04-23

    申请号：US362750

    申请日：1994-12-22

    申请人： Nobuyuki Okamura ,  Atsushi Yamagami

    发明人： Nobuyuki Okamura ,  Atsushi Yamagami

    IPC分类号： C23C14/34 ,  H01J37/34 ,  H01L21/203 ,  H01L21/331

    CPC分类号： C23C14/345 ,  C23C14/34 ,  H01J37/32706 ,  H01J37/3405 ,  H01J37/3473 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02631 ,  H01L29/66287

    摘要： In a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode or said substrate electrode thereby causing the formation of a film on said substrate, the improvement which comprises alternately repeating a deposition step and a non-deposition step, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional deposited film on said substrate.

    摘要翻译： 在一种偏压溅射方法中，包括在真空容器内使用来自高频电源的高频能产生溅射气体的等离子体，所述溅射气体的等离子体在其上具有目标靶的目标电极和具有用于成膜的基板的基板电极之间 并用所述等离子体溅射所述靶，同时从直流电源施加直流电压至所述目标电极或所述衬底电极中的至少一个，由此导致在所述衬底上形成膜，其改进包括交替地重复沉积 步骤和非沉积步骤，所述沉积步骤包括用所述等离子体溅射所述靶，同时用所述等离子体的离子辐照所述衬底，同时在所述衬底上沉积膜，并且所述非沉积步骤包括用所述等离子体的离子照射所述衬底 而不溅射所述靶，从而在s上形成高质量的功能沉积膜 辅助底物。

    Plasma process apparatus and plasma process method
    9.
    发明授权
    Plasma process apparatus and plasma process method 失效
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US6065425A

    公开(公告)日：2000-05-23

    申请号：US120319

    申请日：1998-07-22

    申请人： Satoshi Takaki ,  Atsushi Yamagami

    发明人： Satoshi Takaki ,  Atsushi Yamagami

    IPC分类号： C23C16/24 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

    CPC分类号： H01J37/32082 ,  C23C16/24 ,  C23C16/509 ,  H01J37/32541 ,  H01J37/32577

    摘要： In order to effect a plasma process at a high rate, such as formation of a high-quality deposit film having very uniform thickness and quality over a large-area substrate, (1) an oscillation frequency of an RF generator is used in the range of 30 to 600 MHz, (2) a matching circuit and a cathode electrode are connected through a transmission line and RF power is supplied through the transmission line, (3) the cathode electrode is of an electrically conductive structure of a rod shape and at a connection part between the cathode electrode and an inner conductor of the transmission line, an external shape of a cross section of the cathode electrode is the same as an external shape of a cross section of the inner conductor, and (4) at least the connection part between the cathode electrode and the inner conductor of the transmission line is covered by a dielectric member having the same external shape as an external shape of a transmission medium in the cross section of the transmission line.

    摘要翻译： 为了以高速率实现等离子体处理，例如在大面积基板上形成具有非常均匀厚度和质量的高质量沉积膜，（1）RF发生器的振荡频率在该范围内 （2）匹配电路和阴极通过传输线连接，并且通过传输线提供RF功率，（3）阴极电极为棒状的导电结构，并且在 阴极与传输线的内导体之间的连接部分，阴极的横截面的外形与内导体的横截面的外形相同，（4）至少 在传输线的横截面中，阴极和传输线的内部导体之间的连接部分被具有与传输介质的外部形状相同外形的电介质部件覆盖 ne。

    Plasma CVD apparatus and plasma processing method
    10.
    发明授权
    Plasma CVD apparatus and plasma processing method 失效
    等离子体CVD装置和等离子体处理方法

    公开(公告)号：US06435130B1

    公开(公告)日：2002-08-20

    申请号：US08916540

    申请日：1997-08-22

    申请人： Satoshi Takaki ,  Yoshio Segi ,  Atsushi Yamagami ,  Hiroyuki Katagiri ,  Hitoshi Murayama ,  Yasuyoshi Takai

    发明人： Satoshi Takaki ,  Yoshio Segi ,  Atsushi Yamagami ,  Hiroyuki Katagiri ,  Hitoshi Murayama ,  Yasuyoshi Takai

    IPC分类号： C23C16509

    CPC分类号： H01J37/32091 ,  C23C16/24 ,  C23C16/45578 ,  C23C16/509 ,  G03G5/08278

    摘要： A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member. A plasma-processing method using said cathode electrode.

    摘要翻译： 一种等离子体CVD装置，包括：基本封闭的反应室，其包含基板保持装置和布置在其中的阴极电极，其中来自高频电源的高频功率被提供给所述阴极，以在所述基板保持装置之间产生等离子体，所述基板保持装置具有位于 在其上和所述阴极电极，由此对所述衬底进行等离子体处理，其特征在于，所述阴极包括位于基本上相同的轴上的多个导体构件，所述多个导体构件通过电介质构件电容耦合。1。一种使用所述阴极电极的等离子体处理方法。