发明授权
- 专利标题: Semiconductor memory device and sense circuit
- 专利标题(中): 半导体存储器件和感测电路
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申请号: US694059申请日: 1996-08-08
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公开(公告)号: US5734616A公开(公告)日: 1998-03-31
- 发明人: Hideto Kazama , Shuichi Miyaoka , Akihiko Emori , Kinya Mitsumoto , Tomoyuki Someya , Masahiro Iwamura , Noboru Akiyama
- 申请人: Hideto Kazama , Shuichi Miyaoka , Akihiko Emori , Kinya Mitsumoto , Tomoyuki Someya , Masahiro Iwamura , Noboru Akiyama
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX7-222697 19950808; JPX7-217587 19950825
- 主分类号: G11C11/419
- IPC分类号: G11C11/419 ; G11C7/00
摘要:
A static RAM includes pre-amplifiers, which are made up solely of emitter-follower transistors having their collectors supplied with the power voltage, in one-to-one correspondence to sub common data line pairs which are connected by column switches to complementary data line pairs of memory arrays. The pre-amplifier is provided with a first switch which turns on during the selected state to connect the sub common data line pair to the bases of the transistors and a second switch which turns on during the unselected state to provide the bases with a certain bias voltage lower than the readout signal voltage on the sub common data line pair. The emitter-follower transistors have their emitters connected commonly to form common emitter lines, which are connected to pairs of input terminals of main amplifiers made up of CMOS transistors.