发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US667684申请日： 1996-06-21
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公开(公告)号： US5747843A公开(公告)日： 1998-05-05
- 发明人: Hiroshi Matsuo , Shinya Watanabe , Yuichi Yokoyama , Shinya Inoue
- 申请人： Hiroshi Matsuo , Shinya Watanabe , Yuichi Yokoyama , Shinya Inoue
- 申请人地址： JPX Tokyo JPX Hyogo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha,Ryoden Semiconductor System Engineering Corporation
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha,Ryoden Semiconductor System Engineering Corporation
- 当前专利权人地址： JPX Tokyo JPX Hyogo
- 优先权： JPX7-291223 19951109
- 主分类号： G11C11/4099
- IPC分类号： G11C11/4099 ; H01L21/8242 ; H01L27/105 ; H01L27/108 ; G11C5/02 ; G11C13/00
摘要：
An improved semiconductor memory device in which an electric circuit operates normally is provided. A block of memory cells of a dynamic random access memory is provided on a semiconductor substrate. A dummy storage node is provided near a corner portion of the memory cell block. A dummy cell plate is provided such that it covers the dummy storage node and is electrically insulated from a main cell plate of the DRAM.
公开/授权文献
- US5120726A Rapamycin hydrazones 公开/授权日：1992-06-09