发明授权
- 专利标题： Thin film strained layer ferroelectric capacitors
- 专利标题（中）： 薄膜应变层铁电电容器
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申请号： US418299申请日： 1995-04-07
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公开(公告)号： US5760432A公开(公告)日： 1998-06-02
- 发明人: Kazuhide Abe , Shuichi Komatsu , Kazuhiro Eguchi , Takashi Kawakubo
- 申请人： Kazuhide Abe , Shuichi Komatsu , Kazuhiro Eguchi , Takashi Kawakubo
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX6-106449 19940520
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/8242 ; H01L27/115 ; H01L27/108
摘要：
A capacitor having a first electrode and a dielectric material epitaxially deposited on a surface of the electrode to form a dielectric layer on the electrode. The dielectric material forming the dielectric layer has induced strain in the layer sufficient to significantly improve the dielectric properties. A second electrode is placed on the dielectric layer.
公开/授权文献
- US4556876A Display device with delay time compensation 公开/授权日：1985-12-03
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