公开(公告)号：US5952687A

公开(公告)日：1999-09-14

申请号：US889324

申请日：1997-07-08

申请人： Takashi Kawakubo ,  Kazuhiro Eguchi ,  Shuichi Komatsu ,  Kazuhide Abe

发明人： Takashi Kawakubo ,  Kazuhiro Eguchi ,  Shuichi Komatsu ,  Kazuhide Abe

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/68

CPC分类号： H01L28/55 ,  H01L27/10808 ,  H01L28/91 ,  H01L27/10852 ,  Y10S148/014

摘要： A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.

摘要翻译： 具有半导体衬底，设置在衬底上的绝缘层和存储单元的半导体存储器件。 存储单元具有设置在基板上的开关晶体管和在绝缘层中形成的沟槽中的电荷存储元件。 电荷存储元件具有下列顺序的底电极，电介质层和顶电极。

公开(公告)号：US5760432A

公开(公告)日：1998-06-02

申请号：US418299

申请日：1995-04-07

申请人： Kazuhide Abe ,  Shuichi Komatsu ,  Kazuhiro Eguchi ,  Takashi Kawakubo

发明人： Kazuhide Abe ,  Shuichi Komatsu ,  Kazuhiro Eguchi ,  Takashi Kawakubo

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L27/115 ,  H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/1085 ,  H01L28/55

摘要： A capacitor having a first electrode and a dielectric material epitaxially deposited on a surface of the electrode to form a dielectric layer on the electrode. The dielectric material forming the dielectric layer has induced strain in the layer sufficient to significantly improve the dielectric properties. A second electrode is placed on the dielectric layer.

摘要翻译： 一种电容器，其具有外延沉积在电极表面上的第一电极和电介质材料，以在电极上形成电介质层。 形成电介质层的电介质材料在该层中具有足够的显着改善介电特性的应变。 第二电极放置在电介质层上。

公开(公告)号：US5739563A

公开(公告)日：1998-04-14

申请号：US559945

申请日：1995-11-17

申请人： Takashi Kawakubo ,  Kenya Sano ,  Kazuhide Abe ,  Shuichi Komatsu ,  Noburu Fukushima ,  Kazuhiro Eguchi

发明人： Takashi Kawakubo ,  Kenya Sano ,  Kazuhide Abe ,  Shuichi Komatsu ,  Noburu Fukushima ,  Kazuhiro Eguchi

IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/94 ,  H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.

摘要翻译： 一种半导体存储器件，包括硅衬底，形成在硅衬底上的多个开关晶体管，具有开口并形成在形成有多个开关晶体管的硅衬底的表面部分上的绝缘层，以及多个用于 累积形成在绝缘层上的电荷，并且经由埋在绝缘层开口中的导电膜分别连接到开关晶体管，其中用于积累电荷的每个电容器设置有形成在绝缘层上的下面的晶体层， 基本上由铁电材料构成并在下面的晶体层上生长的外延或取向的电介质膜，并且用于积累彼此连接的电荷的开关晶体管和电容器构成以二维图案布置的多个存储单元。

公开(公告)号：US5691219A

公开(公告)日：1997-11-25

申请号：US527581

申请日：1995-09-13

申请人： Takashi Kawakubo ,  Kazuhiro Eguchi ,  Shuichi Komatsu ,  Kazuhide Abe

发明人： Takashi Kawakubo ,  Kazuhiro Eguchi ,  Shuichi Komatsu ,  Kazuhide Abe

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/70

CPC分类号： H01L28/55 ,  H01L27/10808 ,  H01L28/91 ,  H01L27/10852 ,  Y10S148/014

摘要： A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.

摘要翻译： 具有半导体衬底，设置在衬底上的绝缘层和存储单元的半导体存储器件。 存储单元具有设置在基板上的开关晶体管和在绝缘层中形成的沟槽中的电荷存储元件。 电荷存储元件具有下列顺序的底电极，电介质层和顶电极。

公开(公告)号：US5889299A

公开(公告)日：1999-03-30

申请号：US804394

申请日：1997-02-21

申请人： Kazuhide Abe ,  Shuichi Komatsu ,  Mitsuaki Izuha ,  Noburu Fukushima ,  Kenya Sano ,  Takashi Kawakubo

发明人： Kazuhide Abe ,  Shuichi Komatsu ,  Mitsuaki Izuha ,  Noburu Fukushima ,  Kenya Sano ,  Takashi Kawakubo

IPC分类号： H01L21/02 ,  H01L29/76

CPC分类号： H01L28/55

摘要： A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant "c" in the direction thicknesswise of the film and a lattice constant "a" in the direction parallel with a plane of the film.

摘要翻译： 一种薄膜电容器，包括在其表面上具有立方体系的（100）面或四方晶系的（001）面的第一电极，在第一电极上外延生长并呈现出固有地属于 立方体的钙钛矿结构，以及形成在电介质薄膜上的第二电极。 此外，电介质薄膜满足以下关系V / V0 / = 1.01，其中属于立方体系的真实钙钛矿晶体结构的单位晶格体积（晶格常数a0）由V0 = a03表示，单位晶格体积 晶格常数a = b NOTEQUAL c），其外延生长后由V = a2c表示为四方晶系，并满足以下关系c / a> / = 1.01其中c / a表示晶格常数 在膜的厚度方向上的“c”和与膜的平面平行的方向上的晶格常数“a”。

公开(公告)号：US07769352B2

公开(公告)日：2010-08-03

申请号：US11568365

申请日：2006-09-25

申请人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

发明人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

IPC分类号： H04B1/40 ,  H04B7/00 ,  H04L27/22

CPC分类号： H04L27/2272 ,  H03C3/0966 ,  H03D3/242 ,  H04B1/38 ,  H04L27/2273 ,  H04L2027/0016 ,  H04L2027/0022 ,  H04L2027/0055 ,  H04W56/00 ,  H04W88/02 ,  Y02D70/1222 ,  Y02D70/40

摘要： A receiver has a first voltage control oscillator configured to generate a first oscillation signal, a second voltage control oscillator configured to generate a second oscillation signal having a first phase, a first phase comparator configured to detect a phase difference between the first and second oscillation signals, a demodulator configured to perform demodulation processing of the received signal and to generate timing information of a second phase included in the first oscillation signal, a second phase comparator configured to detect the phase difference between the first and second oscillation signals, and a first control voltage generator configured to generate a first control voltage for controlling a phase and a frequency of the second voltage control oscillator based on the phase difference detected by the second phase comparator.

摘要翻译： 一种接收器具有：第一电压控制振荡器，被配置为产生第一振荡信号;第二压控振荡器，被配置为产生具有第一相位的第二振荡信号;第一相位比较器，被配置为检测第一和第二振荡信号之间的相位差; 解调器，被配置为执行所述接收信号的解调处理并生成包括在所述第一振荡信号中的第二相位的定时信息;第二相位比较器，被配置为检测所述第一和第二振荡信号之间的相位差;以及第一控制 电压发生器被配置为基于由第二相位比较器检测的相位差产生用于控制第二压控振荡器的相位和频率的第一控制电压。

公开(公告)号：US07215066B2

公开(公告)日：2007-05-08

申请号：US11196596

申请日：2005-08-04

申请人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

发明人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

IPC分类号： H01L41/053

CPC分类号： H01H57/00 ,  H01G5/18 ,  H01G5/38 ,  H01H2057/006 ,  H01L41/094 ,  H01L41/0946 ,  H01L41/0953 ,  Y10S977/837

摘要： A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connecting end assigned at another end of the first beam and suspended over a free space; and a second beam including a second piezoelectric film connected to the first piezoelectric film at the connecting end, a second bottom electrode under the second piezoelectric film, and a second top electrode on the second piezoelectric film, a working end assigned at an end of the second beam opposite to another end to which the connecting end is assigned and suspended over the free space; wherein a distance between centers of the fixed end and the working end is shorter than a distance from the working end to the connecting end.

摘要翻译： 压电致动器包括第一梁，该第一梁包括第一底电极，第一底电极上的第一压电膜和第一压电膜上的第一顶电极，分配在第一梁的端部并固定在基板上的固定端 ，分配在第一梁的另一端并悬挂在自由空间上的连接端; 以及第二光束，包括在连接端连接到第一压电膜的第二压电膜，第二压电膜下的第二底电极和第二压电膜上的第二顶电极，分配在第二压电膜的端部的工作端 第二梁相对于连接端被分配并悬挂在自由空间上的另一端; 其中固定端和工作端的中心之间的距离短于从工作端到连接端的距离。

公开(公告)号：US20060055287A1

公开(公告)日：2006-03-16

申请号：US11196596

申请日：2005-08-04

申请人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

发明人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

IPC分类号： H01L41/04

CPC分类号： H01H57/00 ,  H01G5/18 ,  H01G5/38 ,  H01H2057/006 ,  H01L41/094 ,  H01L41/0946 ,  H01L41/0953 ,  Y10S977/837

摘要： A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connecting end assigned at another end of the first beam and suspended over a free space; and a second beam including a second piezoelectric film connected to the first piezoelectric film at the connecting end, a second bottom electrode under the second piezoelectric film, and a second top electrode on the second piezoelectric film, a working end assigned at an end of the second beam opposite to another end to which the connecting end is assigned and suspended over the free space; wherein a distance between centers of the fixed end and the working end is shorter than a distance from the working end to the connecting end.

摘要翻译： 压电致动器包括第一梁，该第一梁包括第一底电极，第一底电极上的第一压电膜和第一压电膜上的第一顶电极，分配在第一梁的端部并固定在基板上的固定端 ，分配在第一梁的另一端并悬挂在自由空间上的连接端; 以及第二光束，包括在连接端连接到第一压电膜的第二压电膜，第二压电膜下的第二底电极和第二压电膜上的第二顶电极，分配在第二压电膜的端部的工作端 第二梁相对于连接端被分配并悬挂在自由空间上的另一端; 其中固定端和工作端的中心之间的距离短于从工作端到连接端的距离。

公开(公告)号：US06870446B2

公开(公告)日：2005-03-22

申请号：US10252105

申请日：2002-09-23

申请人： Ryoichi Ohara ,  Kazuhide Abe ,  Takashi Kawakubo ,  Hiroshi Yoshida ,  Hiroshi Tsurumi ,  Ryuichi Fujimoto

发明人： Ryoichi Ohara ,  Kazuhide Abe ,  Takashi Kawakubo ,  Hiroshi Yoshida ,  Hiroshi Tsurumi ,  Ryuichi Fujimoto

IPC分类号： H03H9/00 ,  H03H9/54 ,  H03H9/58 ,  H03H9/60

CPC分类号： H03H9/605 ,  H03H9/0095 ,  H03H9/542 ,  H03H9/581 ,  H03H2009/02196

摘要： A high frequency filter comprises thin film piezoelectric resonators connected in series between the input/output nodes, thin film piezoelectric resonators connected in parallel between the input/output nodes and a variable voltage circuit adapted to change the voltage applied to at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonators connected in parallel. The resonance characteristic of at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonator connected in parallel is shifted by changing the voltage applied by the variable voltage circuit to change the pass characteristic of the filter.

摘要翻译： 高频滤波器包括串联连接在输入/输出节点之间的薄膜压电谐振器，并联连接在输入/输出节点之间的薄膜压电谐振器和可变电压电路，可变电压电路适于改变施加到至少薄膜的电压 串联连接的压电谐振器或并联连接的薄膜压电谐振器。 串联连接的薄膜压电谐振器或并联连接的薄膜压电谐振器中的至少一个的谐振特性通过改变由可变电压电路施加的电压来改变滤波器的通过特性而被移位。

公开(公告)号：US06809604B2

公开(公告)日：2004-10-26

申请号：US10397876

申请日：2003-03-27

申请人： Takashi Kawakubo ,  Ryoichi Ohara ,  Kazuhide Abe ,  Hiroshi Tsurumi ,  Hiroshi Yoshida ,  Ryuichi Fujimoto

发明人： Takashi Kawakubo ,  Ryoichi Ohara ,  Kazuhide Abe ,  Hiroshi Tsurumi ,  Hiroshi Yoshida ,  Ryuichi Fujimoto

IPC分类号： H03B532

CPC分类号： H03H9/173 ,  H03H9/0095 ,  H03H9/545 ,  H03H9/562 ,  H03H9/564 ,  H03H9/566 ,  H03H9/581 ,  H03H9/585 ,  H03H9/60 ,  H03H2009/02196

摘要： To provide a miniaturized voltage controlled oscillator which can oscillate simultaneously a plurality of frequencies and has high stability of frequency, an excellent low phase noise, small variation per hour, and a wide frequency variable range. A thin film bulk acoustic wave resonator using single crystal ferroelectric material equal to or smaller than 10 &mgr;m in thickness whose direction of polarization is aligned to the direction of thickness is utilized as the piezoelectric member. The voltage controlled oscillator having large changing rate of the oscillation frequency of 0.01%/V or more and an extremely small phase noise is provided by changing the voltage applied to the electrodes.

摘要翻译： 为了提供能够同时振荡多个频率并且具有高的频率稳定性，优异的低相位噪声，小时变化小和宽频率可变范围的微型压控振荡器.1。一种使用单晶的薄膜体声波谐振器 作为压电部件，利用等于或小于10μm厚的偏振方向与厚度方向对准的铁电材料。 通过改变施加到电极上的电压，提供振荡频率变化率大于0.01％/ V以上且极小相位噪声的压控振荡器。