发明授权
- 专利标题： Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers
- 专利标题（中）： 卤素掺杂膜的热后沉积处理以提高膜的稳定性并减少卤素向互连层的迁移
-
申请号： US646862申请日： 1996-05-08
-
公开(公告)号： US5763010A公开(公告)日： 1998-06-09
- 发明人: Ted Guo , Barney M. Cohen , Amrita Verma
- 申请人： Ted Guo , Barney M. Cohen , Amrita Verma
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/56 ; H01L21/3105 ; H01L21/316 ; H01L21/768 ; B05D3/02 ; B05D1/36 ; H05H1/24
摘要：
A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300.degree. and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.
公开/授权文献
信息查询
IPC分类:
