- 专利标题： Tasin oxygen diffusion barrier in multilayer structures
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申请号： US646583申请日： 1996-05-08
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公开(公告)号： US5776823A公开(公告)日： 1998-07-07
- 发明人: Paul David Agnello , Cyril Cabral, Jr. , Alfred Grill , Christopher Vincent Jahnes , Thomas John Licata , Ronnen Andrew Roy
- 申请人： Paul David Agnello , Cyril Cabral, Jr. , Alfred Grill , Christopher Vincent Jahnes , Thomas John Licata , Ronnen Andrew Roy
- 申请人地址： NY Armonk
- 专利权人： IBM Corporation
- 当前专利权人： IBM Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/46 ; H01L21/8238 ; H01L21/8242 ; H01L21/8246 ; H01L27/092 ; H01L27/105 ; H01L27/108 ; H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L29/94
摘要：
A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.
公开/授权文献
- US5243126A Conductive panel 公开/授权日：1993-09-07
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